A method of making a MEMS gyroscope is disclosed herein, wherein the MEMS gyroscope comprised a magnetic sensing mechanism on a magnetic sensor wafer and a magnetic source on a MEMS wafer that further comprises a proof-mass.

The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (2), wherein at least one surface portion (4) of the bonding wafer (2) is formed by an oxide film, providing a dispenser wafer (6), wherein the dispenser wafer (6) is thicker than the bonding wafer (2), bringing the dispenser wafer (6) into contact with the surface portion (4) of the bonding wafer (2) that is formed by the oxide film, forming a multilayer arrangement (8) by connecting the dispenser wafer (6) and the bonding wafer (2) in the region of the contact, producing modifications (18) in the interior of the dispenser wafer (6) for predefining a detachment region (11) for separating the multilayer arrangement (8) into a detaching part (14) and a connecting part (16), wherein the production of the modifications (18) takes place before the formation of the multilayer arrangement (8) or after the formation of the multilayer arrangement (8), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part (16) remains on the bonding wafer (2) and wherein the split-off detachment part (14) has a greater thickness than the connecting part (16).

An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1 C./sec or smaller until a temperature of the substrate increases to 700 C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

A MEMS device is described. The device includes a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, a semiconductor substrate including a second bonding layer, and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer. The first bonding layer includes silicon, the semiconductor substrate is electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate.

A method of making microstructures having re-entrant or doubly re-entrant topology includes forming a mold defining the negative surface features of the re-entrant or doubly re-entrant topology that is to be formed. In one embodiment, a soft or flowable material is formed on a first substrate and the mold is contacted with the same to form a solid, now positive surface having the re-entrant or doubly re-entrant topology. The mold is then released from the first substrate. The microstructures are secured to a second, different substrate, and the first substrate is removed. Any residual microstructure material located between adjacent microstructures may be removed to form the separate microstructures on the second substrate. The second substrate may be thin and flexible any manipulated into useful or desired shapes having the microstructures on one side thereof.

A production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded and the second substrate has a through-hole, the production process including the steps of bonding the first substrate and the second substrate to each other with the presence of a non-bonding region formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate; and causing at least a part of a portion of the second substrate corresponding to the non-bonding region to pass through.