A method for producing a MEMS device comprises fabricating a first semiconductor layer and selectively depositing a second semiconductor layer over the first semiconductor layer, wherein the second semiconductor layer comprises a first part composed of monocrystalline semiconductor material and a second part composed of polycrystalline semiconductor material. The method furthermore comprises structuring at least one of the semiconductor layers, wherein the monocrystalline semiconductor material of the first part and underlying material of the first semiconductor layer form a spring element of the MEMS device and the polycrystalline semiconductor material of the second part and underlying material of the first semiconductor layer form at least one part of a comb drive of the MEMS device.

The present invention relates to a method and device capable to form a nanomaterial structure (13) on a receiver (14) by transfer of nanomaterial from a donor film. In some embodiment, the transfer can be provided by laser induced forward transfer, more preferably by blister based laser induced forward transfer. The method further comprises a simultaneous scanning of the donor film (12) or the receiver (14) so that, a computer driven means for moving the receiver (14) and the donor film (12) can form high precision nanomaterial structure (13). In a preferred embodiment, the simultaneous scanning can be provided by an imaging laser generating high harmonic waves which are detected by a detector. In yet another embodiment, the receiver (14) and/or donor film (12) can be further scanned by a broadband light source(s). In a preferred embodiment, imaging laser and/or light source(s) are emitting polarized light to determine orientation of the nanoparticle deposited on the receiver (14) and forming the nanomaterial structure (13).

A method for forming a biological microdevice includes applying a biocompatible coarse scale additive process with an additive device and a biocompatible material to form an object. The coarse scale is a dimension not less than about 100 μm. The method also includes applying a biocompatible fine scale subtractive process with a subtractive device to the object. The fine scale is a dimension not greater than about 1000 μm. The method also includes moving the object between the additive device and the subtractive device. A system is also provided for performing the above method and includes the additive device, the subtractive device, a means for transporting the object between the additive device and subtractive device and a processor with a memory including instructions to perform one or more of the above method steps.

The superior electronic and mechanical properties of 2D-layered transition metal dichalcogenides and other 2D layered materials could be exploited to make a broad range of devices with attractive functionalities. However, the nanofabrication of such layered-material-based devices still needs resist-based lithography and plasma etching processes for patterning layered materials into functional device features. Such patterning processes lead to unavoidable contaminations, to which the transport characteristics of atomically-thin layered materials are very sensitive. More seriously, such lithography-introduced contaminants cannot be safely eliminated by conventional material wafer cleaning approaches. This disclosure introduces a rubbing-induced site-selective growth method capable of directly generating few-layer molybdenum disulfide device patterns without the need of any additional patterning processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating microscale triboelectric charge patterns on a dielectric surface, and (ii) site-selective deposition of molybdenum disulfide or the like within rubbing-induced charge patterns.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

A compound sensor device includes a semiconductor substrate having an active electronic circuit formed in or on the semiconductor substrate. A sensor including a sensor substrate including a sensor circuit having an environmental sensor or actuator formed in or on the sensor substrate is micro-transfer printed onto the semiconductor substrate. One or more electrical conductors electrically connect the active electronic circuit to the sensor circuit. The semiconductor substrate includes a first material and the sensor substrate includes a second material different from the first material.

A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

A microelectromechanical (MEMS) system may comprise multiple sensors within cavities of the MEMS system. The operation of different sensors requires different pressures within the respective cavities. A first cavity may be sealed at a first pressure. A through-hole may be etched into a cap layer of the MEMS system to introduce gas into a second cavity such that the cavity has a desired pressure. The cavity may then be sealed by a MEMS valve to maintain the desired pressure in the second cavity.

A microelectronic device is formed by forming at least a portion of a substrate of the microelectronic device by one or more additive processes. The additive processes may be used to form semiconductor material of the substrate. The additive processes may also be used to form dielectric material structures or electrically conductive structures, such as metal structures, of the substrate. The additive processes are used to form structures of the substrate which would be costly or impractical to form using planar processes. In one aspect, the substrate may include multiple doped semiconductor elements, such as wells or buried layers, having different average doping densities, or depths below a component surface of the substrate. In another aspect, the substrate may include dielectric isolation structures with semiconductor material extending at least partway over and under the dielectric isolation structures. Other structures of the substrate are disclosed.

A construction method for 3D micro/nanostructure, comprising: Step (1), fixing and vacuuming a material source on a substrate; Step (2), focusing an electron beam to ensure that a position of a focus is 0-100 nm away from a surface of material source, and an interface local domain including the focus of electron beam and surface atoms is formed; and Step (3), controlling the focus of electron beam to move point by point according to a shape of a designed 3D micro/nanostructure, and realizing the construction of 3D micro/nanostructure. This disclosure realizes real-time construction of 3D micro/nanostructure through the migration of atoms driven by uneven atomic density and electric potential difference in interface local domain. This disclosure promotes integrative development of nanotechnology and 3D printing and has good value of application and promotion.