Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

A method of forming a space includes a step of tenting, on a substrate having a recessed portion, a dry film including a dry film material that is to be a top plate on the recessed portion. The step of tenting the dry film includes a press period and a release period and performs a press-release cycle of the press period and the release period a plurality of times, a pressed state in which the dry film is pressed against the substrate by using a pressing member is maintained during the press period, and a released state in which the pressed state is released is maintained during the release period.

A microelectromechanical systems (MEMS) device may be provided with one or more sintered electrical contacts. The MEMS device may be a MEMS actuator or a MEMS sensor. The sintered electrical contacts may be silver-paste metalized electrical contacts. The sintered electrical contacts may be formed by depositing a sintering material such as a metal paste, a metal preform, a metal ink, or a metal powder on a wafer of released MEMS devices and heating the wafer so that the deposited sintering material diffuses into a substrate of the device, thereby making electrical contact with the device. The deposited sintering material may break through an insulating layer on the substrate during the sintering process. The MEMS device may be a multiple degree of freedom actuator having first and second MEMS actuators that facilitate autofocus, zoom, and optical image stabilization for a camera.

A MEMS device includes: a dielectric substrate; a driving electrode, first and second reference electrodes on the dielectric substrate; a first dielectric layer covering the driving electrode; and a membrane bridge on a side of the first dielectric layer away from the dielectric substrate, where a first gap is between the first reference electrode and the driving electrode; a second gap is between the second reference electrode and the driving electrode; and a thickness of a part of the first dielectric layer at each of the first and second gaps is greater than a thickness of the driving electrode; and/or, a second dielectric layer is on a side of a bridge deck of the membrane bridge close to the dielectric substrate, and an orthographic projection of the second dielectric layer on the dielectric substrate covers at least an orthographic projection of the driving electrode on the dielectric substrate.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a device includes a substrate, a titanium nitride diffusion barrier layer formed upon the substrate, a titanium layer formed upon the titanium nitride diffusion barrier layer, a platinum seed layer, and a cobalt-platinum magnetic layer formed upon the platinum seed layer. Based in part on the use of the titanium nitride diffusion barrier layer and/or the platinum seed layer, improvements in the interfaces between the layers can be achieved after annealing, with less delamination, and with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. Further, the cobalt-platinum magnetic layer can be formed at a relatively thin thickness of hundreds of nanometers to a few microns while still maintaining good magnetic properties.

Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.