The present invention relates to a process for producing a dielectric polyurethane film, in which at least the following steps are performed continuously: I) a mixture comprising: a) a compound containing isocyanate groups and having a content of isocyanate groups of >10% by weight and 50% by weight, b) a compound containing isocyanate-reactive groups and having an OH number of 20 and 150, at least one solvent having a vapor pressure at 20 C. of >0.1 mbar and <200 mbar, at least one wetting additive, is produced, where the sum of the number-average functionalities of isocyanate groups and of isocyanate-reactive groups in the compounds a) and b) is 2.6 and 6, II) immediately after production thereof, the mixture is applied to a carrier in the form of a wet film, III) the wet film is cured to form the polyurethane film and IV) the polyurethane film is separated from the carrier. The invention further provides a dielectric polyurethane film obtainable by the process according to the invention, a process for producing an electromechanical transducer, and an electromechanical transducer obtainable by this process.

A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiO.sub.2 on the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.

Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

A method for depositing thin films using a nominally curved substrate. Drops of a pre-cursor liquid organic material are dispensed at a plurality of locations on a nominally curved substrate by one or more inkjets. A superstrate is brought down on the dispensed drops to close the gap between the superstrate and the substrate thereby allowing the drops to form a contiguous film captured between the substrate and the superstrate. A non-equilibrium transient state of the superstrate, the contiguous film and the substrate is enabled to occur after a duration of time. The contiguous film is then cured to solidify it into a solid. The solid is separated from the superstrate thereby leaving a polymer film on the substrate. In this manner, such a technique for film deposition has the film thickness range, resolution and variation required to be applicable for a broad spectrum of applications.

The invention provides a laminate of an inorganic layer, a resin layer, and a coupling agent treatment layer interposed therebetween, which different delamination strengths between the inorganic layer and the resin layer to form a prescribed pattern. The invention also provides a production method comprising (1) treating an inorganic layer with a coupling agent; (2) performing a patterning process to form strong adhesion sections and easily separated sections; and (3) forming a resin layer by drying and heat-treating a coated solution layer obtained by coating a resin solution or a resin precursor solution onto the surface of the inorganic layer that was treated with a coupling agent and then patterned.

The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. One or more first metal vias are formed in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second dielectric layer to electrically connect to the first metal vias. The MEMS devices provided by the present disclosure are compact in size through the integration of the acceleration sensor and the pressure sensor.

A method for manufacturing a micromechanical timepiece part starting from a silicon-based substrate, including, forming pores on the surface of at least one part of a surface of said silicon-based substrate of a determined depth, entirely filling the pores with a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, in order to form, in the pores, a layer of the material of a thickness at least equal to the depth of the pores. A micromechanical timepiece part including a silicon-based substrate which has, on the surface of at least one part of a surface of the silicon-based substrate, pores of a determined depth, the pores being filled entirely with a layer of a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, of a thickness at least equal to the depth of the pores.

A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

A system and method for forming a sensor device includes defining an in-plane electrode in a device layer of a silicon on insulator (SOI) wafer, forming an out-of-plane electrode in a silicon cap layer located above an upper surface of the device layer, depositing a silicide-forming metal on a top surface of the silicon cap layer, and annealing the deposited silicide-forming metal to form a silicide portion in the silicon cap layer.

The present disclosure provides a micro-electro-mechanical systems (MEMS) device. In an embodiment, a device includes a substrate; a MEMS structure disposed above a sacrificial layer opening above the substrate; a release aperture disposed at substantially a same level above the sacrificial layer opening as the MEMS structure; a first cap over the MEMS structure and the sacrificial layer opening, a leg of the first cap disposed between the MEMS structure and the release aperture; and a second cap plugging the release aperture.