A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

A method for the production of a transparent conductor deposit on a substrate, the method comprising: providing a substrate formed from a first material; depositing a film of a second material on the substrate; causing the film to crack so as to provide a plurality of recesses; depositing a conductive material in the recesses; and removing the film from the substrate so as to yield a transparent conductive deposit on the substrate.

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

A method for a capacitive micromachined ultrasound transducer (cMUT) is provided. The method grows and patterns a diffusion barrier layer over a surface of a base layer. The diffusion barrier layer have different areas that allow different levels of diffusion penetration. A diffusion process is performed over the diffusion barrier layer such that a diffusion reactivated material reaches different depths into the base layer below the different areas. A anchor is formed using the diffusion reactivated material. The anchor has a lower portion below a major surface of the base layer and an upper portion above the major surface of the base layer. A cover layer is placed over the anchor and the base layer. At least one of the cover layer and the base layer includes a flexible layer, such that the cMUT electrodes are movable relative to each other to cause a change of the gap width.

A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

A method and apparatus for the etching of variable depth features in a substrate is described. Movement of the substrate relative to an etchant (e.g. into or out of the etchant) during the etching process is utilised to provide a varying etch time, and hence depth, across the substrate, and in various examples this is enabled without requiring a varying mask.

A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.