A fabrication method includes arranging a plurality of dice on a substrate and performing a first etching process that etches a first layer of the substrate at a boundary between adjacent dice on the substrate. The etching forms facets of one or more waveguides that are defined within the first layer, and the etching leaves a portion of the first layer in the boundary between the adjacent dice. The method continues with a second etching process that etches the portion of the first layer and a second layer beneath the portion of the first layer, the second etching process forming a trench in the boundary where the second layer has a different material than the first layer. The method also includes separating the dice from one another along the trench.

A method includes, before attaching a window assembly to a semiconductor wafer, the semiconductor wafer including a plurality of integrated circuits and each integrated circuit including an electrical connection pad, adhering the window assembly to a carrier fixture. The method further includes, before attaching the window assembly to the semiconductor wafer, removing portions of the window assembly to create removal areas. The method then includes attaching the window assembly to the semiconductor wafer such that the electrical connection pad of each of the plurality of integrated circuits is within a removal area and removing the carrier fixture leaving the window assembly adhered to the semiconductor wafer with the electrical connection pad exposed of each of the plurality of integrated circuits.

A method for producing MEMS components comprises generating a carrier having a plurality of recesses. An adhesive structure is arranged on the carrier and in the recesses. A semiconductor wafer is generated, which has a plurality of MEMS structures arranged at the first main surface of the semiconductor wafer. The adhesive structure is attached to the first main surface of the semiconductor wafer, with the recesses being arranged above the MEMS structures and the adhesive structure not contacting the MEMS structures. The semiconductor wafer is singulated into a plurality of MEMS components by applying a mechanical dicing process.

Provided is a plasma dicing method. The plasma dicing method includes: performing plasma etching on a first surface of a substrate exposed between a plurality of membrane structures; forming a passivation layer on a semiconductor wafer to cover the plurality of membrane structures and at least one trench; performing plasma etching on a second surface of the substrate such that a through hole exposing a portion of the plurality of membrane structures and a dicing lane connected to the trench and having a width less than a width of the through hole are formed at the substrate; and removing the passivation layer and singulating the semiconductor wafer into a plurality of devices including a membrane partially exposed by the through hole.

Provided is a plasma dicing method. The plasma dicing method includes: performing plasma etching on a first surface of a substrate exposed between a plurality of membrane structures; forming a passivation layer on a semiconductor wafer to cover the plurality of membrane structures and at least one trench; performing plasma etching on a second surface of the substrate such that a through hole exposing a portion of the plurality of membrane structures and a dicing lane connected to the trench and having a width less than a width of the through hole are formed at the substrate; and removing the passivation layer and singulating the semiconductor wafer into a plurality of devices including a membrane partially exposed by the through hole.

In described examples, a device mounted on a substrate includes an encapsulant. In at least one example, an encapsulant barrier is deposited along a scribe line, along which the substrate is singulatable. To encapsulate one or more terminals of the substrate, an encapsulant is deposited between the encapsulant barrier and an edge of the device parallel to the encapsulant barrier.

A method includes, before attaching a window assembly to a semiconductor wafer, the semiconductor wafer including a plurality of integrated circuits and each integrated circuit including an electrical connection pad, adhering the window assembly to a carrier fixture. The method further includes, before attaching the window assembly to the semiconductor wafer, removing portions of the window assembly to create removal areas. The method then includes attaching the window assembly to the semiconductor wafer such that the electrical connection pad of each of the plurality of integrated circuits is within a removal area and removing the carrier fixture leaving the window assembly adhered to the semiconductor wafer with the electrical connection pad exposed of each of the plurality of integrated circuits.

A method includes attaching an optically transparent wafer to a first surface of an interposer wafer. The interposer wafer has a second surface opposite the first surface, and the second surface has a first channel therein. The method further includes attaching the interposer wafer to a first surface of a semiconductor wafer, and etching a second channel through the optically transparent wafer and through the interposer wafer. The method then includes applying wax into the second channel, and sawing through the optically transparent wafer and through at least a portion of the interposer wafer to form a third channel having a width that is wider than a width of the second channel. The wax is then removed to expose a portion of the first surface of the semiconductor wafer.

In described examples, a device mounted on a substrate includes an encapsulant. In at least one example, an encapsulant barrier is deposited along a scribe line, along which the substrate is singulatable. To encapsulate one or more terminals of the substrate, an encapsulant is deposited between the encapsulant barrier and an edge of the device parallel to the encapsulant barrier.

A method includes, before attaching a window assembly to a semiconductor wafer, the semiconductor wafer including a plurality of integrated circuits and each integrated circuit including an electrical connection pad, adhering the window assembly to a carrier fixture. The method further includes, before attaching the window assembly to the semiconductor wafer, removing portions of the window assembly to create removal areas. The method then includes attaching the window assembly to the semiconductor wafer such that the electrical connection pad of each of the plurality of integrated circuits is within a removal area and removing the carrier fixture leaving the window assembly adhered to the semiconductor wafer with the electrical connection pad exposed of each of the plurality of integrated circuits.