After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.

There is provided a method for forming a composite cavity and a composite cavity formed using the method. The method comprises the following steps: providing a silicon substrate (101); forming an oxide layer on the front side thereof; patterning the oxide layer to form one or more grooves (103), the position of the groove (103) corresponding to the position of small cavity (109) to be formed; providing a bonding wafer (104), which is bonded to the patterned oxide layer to form one or more closed micro-cavity structures (105) between the silicon substrate (101) and the bonding wafer (104); forming a protective film (106) over the bonding wafer (104) and forming a masking layer (107) on the back side of the silicon substrate (101); patterning the masking layer (107), the pattern of the masking layer (107) corresponding to the position of a large cavity (108) to be formed; using the masking layer (107) as a mask, etching the silicon substrate (101) from the back side until the oxide layer at the front side thereof to form the large cavity (108) in the silicon substrate (101); and using the masking layer (107) and the oxide layer as a mask, etching the bonding wafer (104) from the back side through the silicon substrate (101) until the protective film (106) thereover to form one or more small cavities (109) in the bonding wafer (104). The uniformity of thickness of the semiconductor medium layer where the small cavity (109) in the composite cavity is located is well controlled by the present invention.

A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

A method of manufacturing a micro-fluidic probe that is relatively simple comprises providing a pyramidal pit in a substrate with a structural layer. Then metal masking layers using directionally depositing are provided. The angles of deposition are chosen such that for one deposition step the walls are covered but at least one wall is left less or not exposed, whereas for the other deposition said at least one wall is covered except for a bottom section thereof. Thus these deposited layers can be used as masks for etching the structural layer.

A method of forming a membrane of a semiconductor membrane device is provided. The method includes providing a silicon on insulator (SOI) substrate having an active silicon layer, a buried oxide (BOX) layer, and a handle wafer. The method further includes determining a membrane area of said substrate, locally removing said BOX layer in at least a part of said membrane area, providing one or more dielectric layers on said active silicon layer, and etching said substrate to form said membrane that includes said one or more dielectric layers in said membrane area. Said etching includes an anisotropic etch through said handle wafer and said active silicon layer using an etch mask defining an etch area, and said etch area overlaps at least a part of said membrane area.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

In an example, a MEMS device includes an anti-reflective coating layer formed on a substrate of the MEMS device. The device includes a hinge formed on the substrate, where an edge of the hinge on the substrate is aligned with an edge of the anti-reflective coating layer. The device includes a mirror coupled to the hinge.

A method for forming a MEMS structure for an inertial sensor from fused silica includes: depositing a conductive layer on one or more selected regions of a first surface of a fused silica substrate, and illuminating areas of the fused silica substrate with laser radiation in a pattern defining features of the MEMS structure for an inertial sensor. A masking layer is deposited at least on the one or more selected regions of the first surface of the fused silica substrate where the conductive layer has been deposited, such that the illuminated areas of the fused silica substrate remain exposed. A first etch of the exposed areas of the fused silica substrate is performed so as to selectively etch the pattern defining features of the MEMS structure for an inertial sensor.

A method for producing a bonding pad for a micromechanical sensor element. The method includes: depositing a first metal layer onto a top face of the functional layer, and depositing a second metal layer onto the first metal layer, wherein only the first layer or only the second layer is formed in a border region extending around a bonding pad region; covering a protective layer over a top face of the second metal layer in the bonding pad region and over the first or second metal layer in an inner peripheral portion of the border region, which inner peripheral portion adjoins the bonding pad region; etching the first or second layer at least in an outer peripheral portion of the border region down to the top face of the functional layer; removing the protective layer; carrying out an etching process starting from the top face of the layered structure.

A microelectromechanical systems (MEMS) device includes a mirror structure, a frame, a first cantilever, a second cantilever, and first to fourth transmission springs. The first cantilever includes a first electrode. The second cantilever includes a second electrode spaced apart from the first electrode. The mirror structure is suspended in the frame by the first cantilever and the second cantilever. The first transmission spring connects the first cantilever to a first end of the mirror structure. The second transmission spring connects the second cantilever to the first end of the mirror structure. The third transmission spring connects the first cantilever to a second end of the mirror structure. The fourth transmission spring connects the second cantilever to the second end of the mirror structure.