A method for fabricating a microfluidic device includes providing an assembly that includes a first silicon substrate having a hydrophilic silicon oxide top surface that includes a microfluidic channel and a second silicon substrate having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, the second silicon substrate including fluidic access holes giving fluidic access to the microfluidic channel. The method also includes exposing the assembly to oxidative species including one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.

A method for manufacturing an optical device includes: preparing a semiconductor substrate that includes a portion corresponding to a base, a movable unit, and an elastic support portion; forming a first resist layer in a region corresponding to the base on a surface of a first semiconductor layer which is opposite to an insulating layer; forming a depression in the first semiconductor layer by etching the first semiconductor layer using the first resist layer as a mask; forming a second resist layer in a region corresponding to a rib portion on a bottom surface of the depression, a side surface of the depression, and the surface of the first semiconductor layer which is opposite to the insulating layer; and forming the rib portion by etching the first semiconductor layer until reaching the insulating layer using the second resist layer as a mask.

The invention relates to creating a nano-sized recess into a layer of material. For that, a first layer (100) is provided, which defines a first recess (101). The first layer (100) is then conformally covered with a second layer (107) such that the second layer evenly covers the boundaries of the first recess. In this way, the second layer defines a nano-sized recess. Furthermore, the invention relates to using such a structure with a second nano-sized recess for etching a nanoslit into a graphene layer. Furthermore, such a graphene layer with a nanoslit is described to be used for creating a crossed-nanoslit device for sequencing molecules.

A method for forming a chemical guiding structure intended for the self-assembly of a block copolymer by chemoepitaxy, includes forming on a substrate at least one initial pattern made of a first grafted polymer material having a first molar mass and a first chemical affinity with respect to the block copolymer; covering the initial pattern and a region of the substrate adjacent to the initial pattern with a layer including a second graftable polymer material, the second polymer material having a second molar mass, greater than the first molar mass, and a second chemical affinity with respect to the block copolymer, different from the first chemical affinity; and grafting the second polymer material in the region adjacent to the initial pattern.

A method of making microstructures having re-entrant or doubly re-entrant topology includes forming a mold defining the negative surface features of the re-entrant or doubly re-entrant topology that is to be formed. In one embodiment, a soft or flowable material is formed on a first substrate and the mold is contacted with the same to form a solid, now positive surface having the re-entrant or doubly re-entrant topology. The mold is then released from the first substrate. The microstructures are secured to a second, different substrate, and the first substrate is removed. Any residual microstructure material located between adjacent microstructures may be removed to form the separate microstructures on the second substrate. The second substrate may be thin and flexible any manipulated into useful or desired shapes having the microstructures on one side thereof.

The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

In an optical device, when viewed from a first direction, first, second, third, and fourth movable comb electrodes are respectively disposed between a first support portion and a first end of a movable unit, between a second support portion and a second end of the movable unit, between a third support portion and the first end, and between a fourth support portion and the second end of the movable unit. The first and second support portions respectively include first and second rib portions formed so that the thickness of each of the first and second support portions becomes greater than the thickness of the first torsion bar. The third and fourth support portions respectively include third and fourth rib portions formed so that the thickness of each of the third and fourth support portions becomes greater than the thickness of the second torsion bar.

The invention includes a method of promoting interfacial mechanical bonding of two or more components through the use of suspended and/or freestanding structures fabricated using an atom-scale assembly process on at least a portion of the surfaces of such components.

The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.