A MEMS sensor with a media access opening in its carrier board. The MEMS sensor has an integrally filter mesh closing the media access opening. The mesh can be applied in unstructured form over the whole surface of the carrier board. Then, a structuring is performed to produce preferably at the same time a perforation forming the filter mesh.

A MEMS package is provided. The MEMS package includes a metallization layer, a planarization structure, a MEMS device structure, a cap structure and a pressure adjustment element. The planarization structure has an inner sidewall defining a first cavity exposing the metallization layer. The MEMS device structure is bonded to the planarization structure. The MEMS device structure includes a movable element over the first cavity. The cap structure is bonded to the MEMS device structure and has an inner sidewall defining a second cavity facing the movable element. The pressure adjustment element is disposed in the second cavity.

Various embodiments of the present disclosure are directed towards an integrated chip including a microelectromechanical systems (MEMS) structure overlying a substrate. A capping structure overlies the MEMS structure. The capping structure at least partially defines a cavity. The MEMS structure is disposed in the cavity. An outgas structure adjacent to the cavity. The outgas structure comprises an amorphous material.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.

The application relates to structures, e.g. substrates for supporting semiconductor die. The substrate defines a frame which lateral surrounds one or more die and is provided in contact with at least one side surface of the die, wherein the frame defines upper and lower surfaces of the substrate.

A wireless circuit includes a housing having at least one opening, and sensor connected to the housing at the opening. The sensor includes a first layer having a first dimension and a second layer having a second dimension shorter than the first dimension. The second layer may be positioned entirely within the housing and a surface of said first layer may be exposed to an exterior of the housing.

A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

A device includes a substrate and an intermetal dielectric (IMD) layer disposed over the substrate. The device also includes a first plurality of polysilicon layers disposed over the IMD layer and over a bumpstop. The device also includes a second plurality of polysilicon layers disposed within the IMD layer. The device includes a patterned actuator layer with a first side and a second side, wherein the first side of the patterned actuator layer is lined with a polysilicon layer, and wherein the first side of the patterned actuator layer faces the bumpstop. The device further includes a standoff formed over the IMD layer, a via through the standoff making electrical contact with the polysilicon layer of the actuator and a portion of the second plurality of polysilicon layers and a bond material disposed on the second side of the patterned actuator layer.