Patent classifications
B81C2203/0109
Micromechanical component having hermetic through-contacting, and method for producing a micromechanical component having a hermetic through-contacting
A micromechanical component includes: a hermetically sealed housing; a first functional element that is situated inside the housing; a first structured electrically conductive layer that contacts the first functional element and that is situated inside the housing; and a second structured electrically conductive layer, the first conductive layer being electrically contacted via the second conductive layer, and the second conductive layer being electrically contacted laterally through the housing via a hermetic through-contacting in the second conductive layer.
Microphone Arrangement which has an Enlarged Opening and is Decoupled from the Cover
A microphone arrangement having an enlarged opening is disclosed. In an embodiment, the microphone includes a substrate, a transducer element arranged on the substrate, a cover having an opening, wherein the opening of the cover completely covers the transducer element and a sound separation fixing the cover to the transducer element.
SENSOR PACKAGE SUBSTRATE, SENSOR MODULE HAVING THE SAME, AND SENSOR PACKAGE SUBSTRATE MANUFACTURING METHOD
A sensor package substrate has through holes V1 and V2 at a position overlapping a sensor chip mounting area. The through hole V1 has a minimum inner diameter at a depth position D1, and the through hole V2 has a minimum inner diameter at a depth position D2 different from the depth position D1. Thus, since the plurality of through holes are formed at a position overlapping the sensor chip mounting area, the diameter of each of the through holes can be reduced. This makes foreign matters unlikely to enter through the through holes, and a reduction in the strength of the substrate is suppressed. In addition, since the depth position D1 and depth position D2 are located at different depth levels, it is possible to sufficiently maintain the strength of a part of the substrate that is positioned between the through holes V1 and V2.
INTEGRATED MEMS TRANSDUCERS
A MEMS transducer package (300) comprises a package cover (313) comprising a first bonding region (316) and an integrated circuit die (319) comprising a second bonding region (314) for bonding with the first bonding region of the package cover. The integrated circuit die (309) comprises an integrated MEMS transducer (311) and integrated electronic circuitry (312) in electrical connection with the integrated MEMS transducer. The footprint of the integrated electronic circuitry (312) at least overlaps the bonding region (314) of the integrated circuit die (309).
Thin capping for MEMS devices
A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.
BOND RINGS IN SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME
An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.
Full Symmetric Multi-Throw Switch Using Conformal Pinched Through Via
A hermetically sealed component may comprise a glass substrate, a device with at least one electrical port associated with the glass substrate, and a glass cap. The glass cap may have at least one side wall. The glass cap may have a shaped void extending therethrough, from top surface of the glass cap to bottom surface of glass pillar. An electrically conductive plug may be disposed within the void, the plug configured to hermetically seal the void. The electrically conductive plug may be electrically coupled to the electrical port. The glass cap may be disposed on the glass substrate, with the at least one side wall disposed therebetween, to form a cavity encompassing the device. The side wall may contact the glass substrate and the glass cap to provide a hermetic seal, such that a first environment within the cavity is isolated from a second environment external to the cavity.
Semiconductor Package With Built-In Vibration Isolation, Thermal Stability, And Connector Decoupling
A semiconductor package with design features, including an isolation structure for internal components and a flexible electrical connection, that minimizes errors due to environmental temperature, shock, and vibration effects. The semiconductor package may include a base having a first portion surrounded by a second portion. A connector assembly may be attached to the first portion. The connector assembly may extend through an opening in the base. A lid attached may be attached to, at least, the second portion. The attached lid may form a hermetically-sealed cavity defined by an upper surface of the first portion, the connector assembly, and an inner surface of the lid. An elastomer pad may be on the first portion and a sub-assembly may be on the elastomer pad. A flexible electrical connection may be formed between the connector assembly and the sub-assembly.
Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.
VERTICAL SHEAR WELD WAFER BONDING
In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bonding the first substrate to the second substrate. The deformed cantilevered is configured to impede contaminants against contacting an element within the cavity.