A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

An integrated device package is disclosed. The package can include a carrier, such as first integrated device die, and a second integrated device die stacked on the first integrated device die. The package can include a buffer layer which coats at least a portion of an exterior surface of the first integrated device die and which is disposed between the second integrated device die and the first integrated device die. The buffer layer can comprise a pattern to reduce transmission of stresses between the first integrated device die and the second integrated device die.

A method for manufacturing a semiconductor device package includes providing an electrically insulating film having film terminal contacts on a surface thereof, and an opening therethrough. A semiconductor device arrangement at least including a carrier element having arranged thereon a projecting element and element terminal contacts is deposited on the film, wherein the projecting element is introduced into the opening and the element terminal contacts are arranged in contact with the film terminal contacts. The planarization layer is deposited over the carrier element and the film.

A method for forming a MEMS device may include performing a silicon-on-nothing process to form a cavity in a monocrystalline silicon substrate at a first depth relative to a top surface of the monocrystalline silicon substrate; forming, in an electrically conductive electrode region of the monocrystalline silicon substrate, an electrically insulated region extending to a second depth that is less than the first depth relative to the top surface of the monocrystalline silicon substrate; and etching the monocrystalline silicon substrate to expose a gap between a first electrode and a second electrode, wherein the second electrode is separated from the first electrode, within a first depth region, by a first distance defined by the electrically insulated region and the gap, and wherein the second electrode is separated from the first electrode, within a second depth region, by a second distance defined by the gap.

A waterproofed environmental sensing device with water detection provisions includes an environmental sensor to sense one or more environmental properties. The device further includes an electronic integrated circuit implemented on a substrate and coupled to the environmental sensor via a wire bonding. An air-permeable cap structure is formed over the environmental sensor, and a protective layer is formed over the wire bonding to protect the wire bonding against damage.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method for producing a micromechanical element includes producing a micromechanical structure, the micromechanical structure having: a functional layer for a micromechanical element, a sacrifical layer at least partly surrounding the functional layer, and a closure cap on the sacrifical layer. The method further includes applying a cover layer on the micromechanical structure. The method further includes producing a grid structure in the cover layer. The method further includes producing a cavity below the grid structure, as access to the sacrifical layer. The method further includes at least partly removing the sacrifical layer. The method further includes applying a closure layer at least on the grid structure of the cover layer for the purpose of closing the access to the cavity.