A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

A method for forming a sealed cavity includes bonding a non-conductive structure to a first substrate to form a non-conductive aperture into the first substrate. On a surface of the non-conductive structure opposite the first substrate, the method includes depositing a first metal layer. The method further includes patterning a first iris in the first metal layer, depositing a first dielectric layer on a surface of the first metal layer opposite the non-conductive structure, and patterning an antenna on a surface of the first dielectric layer opposite the first metal layer. The method also includes creating a cavity in the first substrate, depositing a second metal layer on a surface of the cavity, patterning a second iris in the second metal layer, and bonding a second substrate to a surface of the first substrate opposite the non-conductive structure to thereby seal the cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The 3D structure includes a composite photoresist material that includes: (a) a first layer having a first photoacid generator therein having at least a first radiation exposure wavelength and (b) at least a second layer having a second photoacid generator therein having a second radiation exposure wavelength that is different from the first radiation exposure wavelength, and wherein the composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material.

A process for manufacturing an integrated semiconductor device, envisages: forming a MEMS structure; forming an ASIC electronic circuit; and electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.

A method for forming a MEMS device may include performing a silicon-on-nothing process to form a cavity in a monocrystalline silicon substrate at a first depth relative to a top surface of the monocrystalline silicon substrate; forming, in an electrically conductive electrode region of the monocrystalline silicon substrate, an electrically insulated region extending to a second depth that is less than the first depth relative to the top surface of the monocrystalline silicon substrate; and etching the monocrystalline silicon substrate to expose a gap between a first electrode and a second electrode, wherein the second electrode is separated from the first electrode, within a first depth region, by a first distance defined by the electrically insulated region and the gap, and wherein the second electrode is separated from the first electrode, within a second depth region, by a second distance defined by the gap.

A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

A method of fabricating a MEMS device includes an epi-polysilicon cap layer epitaxially growth on one of a substrate or a sacrificial layer deposited on the substrate. A portion of the epi-polysilicon cap layer has been removed to form a plurality of access openings. The sacrificial layer is etched away to form a cavity below the access openings. A barrier layer is deposited over the epi-polysilicon cap layer, inner walls of the cavity, and inner walls of the access openings using an atomic layer deposition (ALD) process. A refill epi-polysilicon layer is epitaxially grown in the access openings and seals the openings after the cavity is formed.