A chip package includes a first die, a second die, a molding material, and a redistribution layer. The first die includes a first conductive pad. The second die is disposed on the first die and includes a second conductive pad. The molding material covers the first die and the second die. The molding material includes a top portion, a bottom portion, and an inclined portion adjoins the top portion and the bottom portion. The top portion is located on the second die, and the bottom portion is located on the first die. The redistribution layer is disposed along the top portion, the inclined portion, and the bottom portion. The redistribution layer is electrically connected to the first conductive pad and the second conductive pad.

A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106). The moulding compound is then introduced (110) into the packaging mould during a predetermined period of time (112) so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.

Examples include a device comprising integrated circuit dies molded into a molded panel. The molded panel has three-dimensional features formed therein, where the three-dimensional features are associated with the integrated circuit dies. To form the three-dimensional features, a feature formation material is deposited, the molded panel is formed, and the feature formation material is removed.

A method for forming a packaged electronic die includes forming a plurality of bonding pads on a device wafer. A photoresist layer is deposited over the device wafer and is patterned so as to form a photoresist frame that completely surrounds a device formed on the device wafer. Conductive balls are deposited over the bonding pads. The wafer is cut to form the electronic die and the electronic die is placed over the substrate. The conductive balls are heated and compressed, moving the electronic die closer to the substrate such that the photoresist frame is in direct contact with the substrate or with a landing pad formed on the substrate. Encapsulant material is deposited such that the encapsulant material covers the electronic die and the substrate. The encapsulant material is cured so as to encapsulate the electronic die. The substrate is cut to separate the packaged electronic die.

A method for manufacturing a MEMS sensor. The method includes: providing a substrate, applying a support layer onto a back side of the substrate, forming at least one cavity in the substrate in such a way that an access to the back side from the front side is formed, introducing a MEMS structure into the at least one cavity, and fixing the MEMS structure on the support layer.

A chip package includes a first die, a second die, a molding material, and a redistribution layer. The first die includes a first conductive pad. The second die is disposed on the first die and includes a second conductive pad. The molding material covers the first die and the second die. The molding material includes a top portion, a bottom portion, and an inclined portion adjoins the top portion and the bottom portion. The top portion is located on the second die, and the bottom portion is located on the first die. The redistribution layer is disposed along the top portion, the inclined portion, and the bottom portion. The redistribution layer is electrically connected to the first conductive pad and the second conductive pad.

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

A sensing device includes a lead frame, a first insulating film, a semiconductor integrated circuit chip provided over the lead frame via the first insulating film, and a first bonding wire via which an external derivation lead and the semiconductor integrated circuit chip are electrically coupled to each other. The sensing device includes a sensor chip disposed over the semiconductor integrated circuit chip such that a first surface of the sensor chip faces the semiconductor integrated circuit chip. The sensing device includes a sensor provided on a second surface of the sensor chip. The sensing device includes a molding resin with which the lead frame, the semiconductor integrated circuit chip, the sensor chip, and the first bonding wire are sealed. The sensor chip is electrically coupled to the semiconductor integrated circuit chip, and the molding resin has an opening in which the sensor is exposed.

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes MEMS dies (200) and a device wafer (100), wherein the device wafer (100) is provided with a control unit and an interconnection structure (300); a first bonding face (100a) of the device wafer (100) is provided with first contact pads (410) and an input and output connection member (420); the MEMS dies (200) are arranged side by side on the first bonding face (100a) by a bonding layer (500); the MEMS die (200) has a micro-cavity (210) and a second contact pad (220); the micro-cavity (210) of the MEMS die (200) has a through hole (210a) in communication with the outside; the first contact pad (410) is electrically connected to the corresponding second contact pad (220); and the bonding layer (500) has an opening (510) exposing the input and output connection member (420). According to the MEMS package structure, the size of the package structure can be reduced with respect to an existing integration method; and various MEMS dies can be integrated on the same device wafer, and thus, a function integration capability of the package structure can also be improved.

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a closed micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a surface opposing the first surface (100a). The MEMS package structure allows electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration techniques. In addition, a plurality of MEMS dies of the same or different structures and functions are allowed to be integrated on the same device wafer.