According to the present invention, since a silicon body itself supporting first and second glass substrates also has a role of an electric heating device, the temperature of the inside of a through-part can be maintained to be constant. In addition, since it is unnecessary to comprise a separate electric heating device such as a heater or to form an additional heating pattern in order to control the temperature of the inside of the through-part, a process for manufacturing a vapor cell can be simplified. According to the present invention, only a reactive material in a gas state and a buffer gas can be injected into a sealed container without the intervention of other materials, and the size of the sealed container can be reduced since it is unnecessary to prepare e separate space for mounting a pill of the reaction material in a vapor cell region itself.

A device is provided that includes a handle layer with at least one cavity and suspension structure, a patterned polycrystalline silicon (poly-Si) first device layer, where at least one structural element is suspended by the structure, and may include a seismic element. A second electrically insulating layer is present, followed by a second device layer of patterned single-crystal silicon (mono-Si) with at least one moveably suspended seismic element above the first layer. A cap layer finalizes the structure, with the handle layer, device layers, and the cap layer forming an enclosure's walls. The first and second insulating layers bond the handle and device layers. The enclosure includes at least one seismic element from the second device layer, and at least one static and moveable electrode for motion detection or causation, with the static electrode in the first device layer.

A sensor for measuring, for example, the pressure of a gas or other fluid comprising a glass substrate having an aperture defined therethrough. A semiconductor die defining a diaphragm is anodically bonded to the glass substrate such that the diaphragm is exposed via the aperture. At least one electrically conductive element in electrical communication with the semiconductor die is arranged on a surface of the glass substrate.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

A MEMS device is provided that includes a cap layer and a device layer. The cap layer includes a cap wafer made of electrically insulating material, and the device layer includes at least one seismic element. Moreover, the cap layer includes at least one silicon-filled portion at a first face of the cap layer facing the device layer, and at least one of said at least one silicon-filled portion includes a gap that locally increases distance from the cap layer to the at least one seismic element in the device layer.

An improved wafer bonding method applying at least one prebonding element that deflects in the out-of-plane direction.

A physical quantity sensor has a package, which is provided with a substrate and a lid and has an internal space inside, and a functional element which is accommodated in the internal space, the lid is formed on a partition wall section which is provided on the periphery of the internal space in planar view and has a communication hole which causes a lower surface at the substrate side to communicate with an upper surface at the opposite side to the substrate, and the communication hole communicates with the internal space via a groove which is formed in the substrate.

A manufacturing method of a MEMS sensor includes forming a first substrate, wherein the first substrate includes a lower electrode provided at one surface thereof, forming a second substrate, wherein the second substrate includes a first concave-convex portion provided at one surface thereof, first-bonding one surface of the first substrate and one surface of the second substrate to face each other, forming a third substrate, wherein the third substrate includes an upper electrode provided at one surface thereof, second-bonding another surface of the second substrate and one surface of the third substrate to face each other, and forming an electrode line on another surface of the third substrate to be connected to the lower electrode and the upper electrode.

A manufacturing method of an electronic device includes a process that forms a protective layer on at least a portion of the first base body to which a third base body is to be bonded, a process that performs first bonding of a second base body to the first base body, a process that performs a first etching of the second base body bonded by the first bonding, a process that removes the protective layer using a second etching, and a process that performs second bonding of the third base body to the first base body. In the first etching, an etching rate of the second base body is faster than those of the first base body and the protective layer, and in the second etching, an etching rate of the protective layer is faster than those of the first base body and the second base body.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.