A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.

Provided is a nano structure for controlling optical properties of an optical device. The nano structure includes a substrate, a surface modification layer provided on the substrate to modify surface energy of the substrate, and a capping layer provided on the surface modification layer. The capping layer includes a convex portion having a convex profile away from the surface modification layer and a concave portion that is in contact with the surface modification layer.

A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.

One embodiment is a nanostructured arrangement having a base and pyramidal features formed on the base. Each pyramidal feature includes sloping sides converging at a vertex. The nanostructured arrangement further includes a nanostructured surface formed on at least one of the sloping sides of at least one of the pyramidal features. The nanostructured surface has a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern. Each ridge element has a wavelike cross-section and oriented substantially in a first direction.

The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h.sup.+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.

A technique related to sorting entities is provided. An inlet is configured to receive a fluid, and an outlet is configured to exit the fluid. A nanopillar array, connected to the inlet and the outlet, is configured to allow the fluid to flow from the inlet to the outlet. The nanopillar array includes nanopillars arranged to separate entities by size. The nanopillars are arranged to have a gap separating one nanopillar from another nanopillar. The gap is constructed to be in a nanoscale range.

An article is provided, the article including a substrate having a surface with a first wettability characteristic. A nano-structure array is formed on the surface of the substrate to provide a nano-structured surface having a second wettability characteristic. A thin-layer surface coating is formed on the nano-structured surface, the thin-layer surface coating being configured to tune the nano-structured surface to a target wettability characteristic.

The present invention relates to a method for preparing a nanostructure by electrochemical deposition, and a nanostructure prepared thereby, and more specifically, to: a method for preparing a nanostructure by electrochemical deposition, wherein it is possible to prepare a nanostructure having remarkable morphological, structural and optical characteristics by controlling a method for applied power during electrochemical deposition; and a nanostructure prepared thereby.

A 3D nanopore device for characterizing biopolymer molecules includes a first selecting layer having a first axis of selection. The device also includes a second selecting layer disposed adjacent the first selecting layer and having a second axis of selection orthogonal to the first axis of selection. The device further includes an third electrode layer disposed adjacent the second selecting layer, such that the first selecting layer, the second selecting layer, and the third electrode layer form a stack of layers along a Z axis and define a plurality of nanopore pillars.

The disclosed embodiments provide a system that performs molecular assembly. During operation, the system delivers one or more droplets of a fluid onto a surface using a nanofluidic delivery probe and an associated high-precision positioning device, wherein the solution comprises a solvent and one or more solute molecules, and wherein delivery of the droplets onto the surface facilitates evaporation-driven assembly of one or more structures on the surface. Moreover, while delivering a droplet onto the surface, the system controls a size of the droplet and a shape of the droplet during evaporation to produce a variety of shapes in resulting structures.