A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.

In a method of manufacturing a highly stretchable three-dimensional (3D) percolated conductive nano-network structure, a 3D nano-structured porous elastomer including patterns distributed in a periodic network is formed. A surface of the 3D nano-structured porous elastomer is changed to a hydrophilic state. A polymeric material is conformally adhered on the surface of the 3D nano-structured porous elastomer. The surface of the 3D nano-structured porous elastomer is wet by infiltrating a conductive solution in which a conductive material is dispersed. A 3D percolated conductive nano-network coupled with the 3D nano-structured porous elastomer is formed by evaporating a solvent of the conductive solution and removing the polymeric material.

Provided is a method of fabricating a micro/nanowire having a nanometer- to micrometer-sized diameter at predetermined positions on an object. The method comprises: preparing a micro/nanopipette having a tip with an inner diameter (d.sub.pt) which is substantially the same as the diameter of the micro/nanowire to be fabricated; filling the micro/nanopipette with a solution containing a micro/nanowire-forming material; bringing the solution into contact with the object through the tip of the micro/nanopipette; and pulling the micro/nanopipette apart from the object at a pulling speed lower than or equal to a predetermined critical pulling speed (v.sub.c) to fabricate a micro/nanowire having substantially the same diameter as the inner diameter of the micro/nanopipette tip (d.sub.pt). The critical pulling speed (v.sub.c) is defined by a maximum limit of the pulling speed at which the micro/nanowire to be fabricated has the same diameter as the inner diameter of the micro/nanopipette tip (d.sub.pt).

A method for manufacturing a MEMS microphone device with a monolithically integrated environmental barrier structure includes providing a substrate structure including a base substrate and an additional substrate material layer deposited on the base substrate, creating a micromechanical environmental barrier structure in the substrate structure by applying a microstructuring process, where the micromechanical environmental barrier structure is configured to let a first amount of air pass through while preventing a second amount of at least one of moisture, liquid, oil or solid environmental particles from passing through, and creating a MEMS sound transducer structure in the additional substrate material of the substrate structure by applying a microstructuring process.

Methods of manufacturing well-controlled nanopores using directed self-assembly and methods of manufacturing free-standing membranes using selective etching are disclosed. In one aspect, one or more nanopores are formed by directed self-assembly with block co-polymers to shrink the critical dimension of a feature which is then transferred to a thin film. In another aspect, a method includes providing a substrate having a thin film over a highly etchable layer thereof, forming one or more nanopores through the thin film over the highly etchable layer, for example, by a pore diameter reduction process, and then selectively removing a portion of the highly etchable layer under the one or more nanopores to form a thin, free-standing membrane.

A method for manufacturing a metallic nanospring includes preparing a nanotemplate having a nanopore and including a working electrode disposed on its one surface, preparing a first metal precursor mixture including ascorbic acid (C.sub.6H.sub.8O.sub.6), vanadium (IV) oxide sulfate (VOSO.sub.4.xH.sub.2O), and a metal precursor solution including a metal desired to be deposited, preparing a second metal precursor mixture by mixing the first metal precursor mixture with nitric acid (HNO.sub.3), depositing a metallic nanospring into the nanopore using electrodeposition by dipping the nanotemplate into the second metal precursor mixture and applying current between a counter electrode inserted into the second metal precursor mixture and the working electrode, and selectively removing the working electrode on the nanotemplate with the deposited metallic nanospring and the nanotemplate.

A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.

A method for surface writing is disclosed. The method includes fabricating a plurality of nanomotors, forming a secondary solution by adding the plurality of nanomotors to a primary solution placed on a substrate, guiding the plurality of nanomotors along a path in the secondary solution, and forming a sol-gel film along the path on a surface of the substrate. Wherein, the primary solution includes a monomer and hydrogen peroxide (H.sub.2O.sub.2). Fabricating the plurality of nanomotors includes preparing a mesoporous silica template, forming the plurality of nanomotors within the mesoporous silica template, and separating the plurality of nanomotors from the mesoporous silica template. The mesoporous silica template includes a plurality of channels, wherein each channel of the plurality of channels has a diameter less than about 50 nm and a length of less than about 100 nm, and each nanomotor of the plurality of nanomotors is formed within a channel of the plurality of channels.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.