Patent classifications
B01J2203/068
System and method for rapid, high throughput, high pressure synthesis of materials from a liquid precursor
The present disclosure relates to a system and method for synthesis of condensed, nano-carbon materials to create nanoparticles. In one embodiment the system may have a source of liquid precursor, a flow control element and a shock wave generating subsystem. The flow control element is in communication with the source of the liquid precursor and creates a jet of liquid precursor. The shock wave generating subsystem drives a shock wave through at least a substantial portion of a thickness of the jet of liquid precursor to sufficiently compress the jet of liquid precursor, and to increase a pressure and a temperature of the jet of liquid precursor, to create solid state nanoparticles.
Reactor for hydrothermal growth of structured materials
Design, fabrication, and usage of a reactor are presented for synthesis of structured materials from a liquid-phase precursor by heating. The structured materials are particles, membranes or films of micro-porous molecular sieve crystals such as zeolite and meso-porous materials. The precursor solution and structured materials in the reactor are uniformly heated by a planar heater with characteristic heat transfer dimension in the range of 3 mm to 10 cm. A planar heater having width and length at least three times of the characteristic heat transfer dimension provides at least one surface of uniform temperature distribution for heating purposes. Heating is conducted over a temperature range of 20 to 300 C. The planar heater can be heated by electrical power of by thermal fluid.
Reactor for Hydrothermal Growth of Structured Materials
Design, fabrication, and usage of a reactor are presented for synthesis of structured materials from a liquid-phase precursor by heating. The structured materials are particles, membranes or films of micro-porous molecular sieve crystals such as zeolite and meso-porous materials. The precursor solution and structured materials in the reactor are uniformly heated by a planar heater with characteristic heat transfer dimension in the range of 3 mm to 10 cm. A planar heater having width and length at least three times of the characteristic heat transfer dimension provides at least one surface of uniform temperature distribution for heating purposes. Heating is conducted over a temperature range of 20 to 300 C. The planar heater can be heated by electrical power of by thermal fluid.
SYSTEM AND METHOD FOR RAPID, HIGH THROUGHPUT, HIGH PRESSURE SYNTHESIS OF MATERIALS FROM A LIQUID PRECURSOR
The present disclosure relates to a system and method for synthesis of condensed, nano-carbon materials to create nanoparticles. In one embodiment the system may have a source of liquid precursor, a flow control element and a shock wave generating subsystem. The flow control element is in communication with the source of the liquid precursor and creates a jet of liquid precursor. The shock wave generating subsystem drives a shock wave through at least a substantial portion of a thickness of the jet of liquid precursor to sufficiently compress the jet of liquid precursor, and to increase a pressure and a temperature of the jet of liquid precursor, to create solid state nanoparticles.
Reactor for hydrothermal growth of structured materials
Design, fabrication, and usage of a reactor are presented for synthesis of structured materials from a liquid-phase precursor by heating. The structured materials are particles, membranes or films of micro-porous molecular sieve crystals such as zeolite and meso-porous materials. The precursor solution and structured materials in the reactor are uniformly heated by a planar heater with characteristic heat transfer dimension in the range of 3 mm to 10 cm. A planar heater having width and length at least three times of the characteristic heat transfer dimension provides at least one surface of uniform temperature distribution for heating purposes. Heating is conducted over a temperature range of 20 to 300 C. The planar heater can be heated by electrical power of by thermal fluid.
Reactor for Hydrothermal Growth of Structured Materials
Design, fabrication, and usage of a reactor are presented for synthesis of structured materials from a liquid-phase precursor by heating. The structured materials are particles, membranes or films of micro-porous molecular sieve crystals such as zeolite and meso-porous materials. The precursor solution and structured materials in the reactor are uniformly heated by a planar heater with characteristic heat transfer dimension in the range of 3 mm to 10 cm. A planar heater having width and length at least three times of the characteristic heat transfer dimension provides at least one surface of uniform temperature distribution for heating purposes. Heating is conducted over a temperature range of 20 to 300 C. The planar heater can be heated by electrical power of by thermal fluid.
Process for manufacturing synthetic single crystal diamond material using a pressure driven growth process and a plurality of seed pads with each seed pad comprising a plurality of single crystal diamond seeds
A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by reducing pressure and temperature, wherein the plurality of single crystal diamond seeds remain anchored to, or embedded in, the inert holders during the HPHT growth cycle.
Pressurized Taylor Vortex reactor
A reaction apparatus includes a hollow chamber with a stirring shaft. The chamber is maintained at a predetermined pressure and accepts at least two reactants from two storage tanks. The stirring shaft rotates around an axis and creates a reaction product. Taylor vortexes are created while the pressure minimizes the volume possession of the gas phase. The reaction product of micron and sub-micron particles is removed from the chamber and depressurized.
SAPO-11 molecular sieve, preparation method thereof, and use thereof in hydrocarbon isomerization
A SAPO-11 molecular sieve, preparation method thereof and use thereof in the isomerization of hydrocarbons is disclosed. The preparation method includes dissolving an aluminum source in ethylene glycol, and stirring to give a solution A; adding a structure-directing agent and a phosphorus source to the solution A, and stirring to give a solution B; adding a silicon source to the solution B, and stirring to give a solution C; transferring the solution C to a supercritical CO2 reactor, and introducing CO2 into the reactor to increase the pressure in the reactor; heating the supercritical CO2 reactor to the reaction temperature for crystallization; and after crystallization, lowering the temperature of the supercritical CO2 reactor, removing the solution from the reactor, separating the product, drying and calcining to obtain the SAPO-11 molecular sieve. A hydrocarbon isomerization catalyst can be obtained by molding the molecular sieve, loading a metal component, drying and calcining.
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm.sup.?1 to 1333 cm.sup.?1 in a Raman spectrum has a half-width of 2.0 cm.sup.?1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm.sup.2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a .sup.13C content of less than 0.01% based on the number of atoms.