A system for thermally treating components includes an indirect-fired oven, the indirect-fired oven having an internal chamber configured to house the components and an air intake in fluid communication with the internal chamber. A source of heat is disposed external to the internal chamber of the indirect-fired oven, and a combustion source is disposed external to the internal chamber of the indirect-fired oven and is configured to generate gas combustion products. An exhaust line is in fluid communication with the internal chamber of the indirect-fired oven, and the gas combustion products are introduced into the internal chamber of the indirect-fired oven.

A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper ammine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby.

The present disclosure provides methods for forming a material layer in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one example, a method for forming a dielectric material on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a dielectric material disposed on an optically transparent silicon containing material, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure at greater than 2 bar, and thermally treating the dielectric material in the presence of the oxygen containing gas mixture.

An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

The disclosure relates to a method for coating a substrate with a lacquer. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarising a lacquer layer.

A method for coating a substrate with a lacquer is disclosed. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarizing a lacquer layer.

One variation of a system includes a garment insert: configured to be worn across a dermal surface; including a textile panel defining a grid receptacle; and including a grid structure arranged within the grid receptacle and defining an array of apertures. The system further includes a cooling unit including a heatsink structure: defining a base section defining an inner surface configured to contact the dermal surface; and defining a set of heatsink columns extending from the base section, opposite the inner surface, and configured to seat extending through the array of apertures. The cooling unit: is configured to wick moisture from the dermal surface toward surfaces of the set of heatsink columns; and includes a polymer frame, bonded to the heatsink structure about the base section, configured to abut surfaces of the base section to surfaces of the grid receptacle to flexibly retain the cooling unit within the grid receptacle.

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.