A gas sensing device is manufactured with three dimensionally connected metal oxide foam structure of large surface area and elongated channel pores within the three-dimensional porous structure for gas sensing applications, thereby increasing the surface area of the sensing layer and expediting sensitivity and sensor response. A gas sensor device includes the fabricated metal-oxide-foam sensing material attached via silver paste to platinum electrodes and ruthenium heater that are printed on low temperature co-fired ceramic substrate. This device will provide improved gas sensing performance with improved sensitivity and response time. Gas sensors including the metal oxide foam sensing material exhibit higher sensitivity to toxic gases such as ethanol and carbon monoxide due to the large surface area achieved from the porous three-dimensional structure providing increased chemical reaction sites and the larger porous channels allowing gases to easily pass, shortening the gas diffusion reaction path.

A light metal joint filler is provided. The light metal joint filler is formed by uniformly mixing a solvent with a light metal powder and a silver powder, where a powder particle size of the light metal powder is on a micron scale, and a powder particle size of the silver powder is on a nanometer scale or a submicron scale. A metal joining method of the present disclosure includes: coating a joint of two to-be-joined light metal pieces with the light metal joint filler; and hot pressing the two to-be-joined light metal pieces, so that the silver powder is sintered and bonded with the light metal powder and surfaces of the two to-be-joined light metal pieces, and completing joining of the two to-be-joined light metal pieces after the silver powder is condensed.

A thrust chamber liner includes a metallic combustion chamber having an annular protrusion extending radially away from an exterior surface of the combustion chamber adjacent to its injector opening. A metallic nozzle is coupled to the combustion chamber at its throat opening. A composite material encases the exterior surface of the combustion chamber, but is only bonded to the annular protrusion.

A metal paste for low temperature bonding at temperatures 600° C. or lower, the metal paste comprising: a metal particle with an average particle size of 1 to 100 μm; a metal nanoparticle with an average particle size of 1 to 500 nm; a stress relieving material; and a dispersion medium to disperse the metal particle, metal nanoparticle, and the stress relieving material.

A metal paste for low temperature bonding at temperatures 600° C. or lower, the metal paste comprising: a metal particle with an average particle size of 1 to 100 μm; a metal nanoparticle with an average particle size of 1 to 500 nm; a stress relieving material; and a dispersion medium to disperse the metal particle, metal nanoparticle, and the stress relieving material.

The present disclosure relates to an Ag paste composition and a bonding film produced using same, the Ag paste composition being coated on a first object, and the first object being pressure sintered toward a second object side, thereby forming a sintered bonding layer between the first object and the second object, wherein the Ag paste composition comprises 90˜99 wt % of Ag powder, and 1˜10 wt % of an organic binder. The present disclosure controls the specific surface area and grain shape of the Ag powder, even without applying a spherical nanoparticle powder, and thus has the advantages of lowering a bond temperature and increasing bond density, thereby enabling the improvement of bond strength and reliability.

A bonded body is provided including: a bonding layer containing Cu; and a semiconductor element bonded to the bonding layer. The bonding layer includes an extending portion laterally extending from a peripheral edge of the semiconductor element. In a cross-sectional view in a thickness direction, the extending portion rises from a peripheral edge of a bottom of the semiconductor element or from the vicinity of the peripheral edge of the bottom of the semiconductor element, and includes a side wall substantially spaced apart from a side of the semiconductor element. Preferably, the extending portion does not include any portion where the side wall and the side of the semiconductor element are in contact with each other. A method for manufacturing a bonded body is also provided.

The invention relates to a highly heat conductive valve seat ring (1) comprising a carrier layer (2) and a functional layer (3), wherein the carrier layer (2) consists of a solidified copper matrix containing 0.10 to 20% w/w of a solidifying component and the functional layer (3) consists of a solidified copper matrix which further contains, based on the copper matrix, 5 to 35% w/w of one or more hard phases.

The invention relates to a highly heat conductive valve seat ring (1) comprising a carrier layer (2) and a functional layer (3), wherein the carrier layer (2) consists of a solidified copper matrix containing 0.10 to 20% w/w of a solidifying component and the functional layer (3) consists of a solidified copper matrix which further contains, based on the copper matrix, 5 to 35% w/w of one or more hard phases.

A composition for pressure bonding contains a metal powder and a solid reducing agent and has a compressibility of 10% to 90%, the compressibility being expressed by a relationship formula using the thickness A of a dried coating film formed by drying the composition in an air atmosphere at 110° C. under atmospheric pressure for 20 minutes and the thickness B of a sintered body formed by treating the dried coating film in a nitrogen atmosphere at 280° C. under a pressure of 6 MPa for 20 minutes. The solid reducing agent may be BIS-TRIS. Also provided is a bonded structure of conductors in which a bonding portion via which two conductors are bonded together is formed by treating, under pressure, the two conductors and a coating film formed of the composition for pressure bonding provided therebetween.