An apparatus and method of mechanical milling and grinding of various materials at temperatures ranging from sub-ambient conditions to well-below their ductile-brittle transition temperature (DBTT) are presented. In one embodiment the present invention entails the design of a cryogenic milling chamber compatible with horizontal high-energy mills. The new design and configuration of the milling vessel provides robust and efficient cryomilling of various materials with no contact between the cryogen and the powders. Some embodiments of the invention improve the heat removal rate from the non-uniform heat load generated by the impact energy deposited into the chamber wall by the milling media.

Disclosed herein are systems and methods for synthesis of spheroidized metal or metal alloy powders using microwave plasma processing. In some embodiments, the metal or metal alloy may comprise a highly ductile, soft, and/or malleable metal or metal alloy such that machining of the metal or metal alloy is difficult or impossible. In some embodiments, a volatile material is dispersed within the metal or metal alloy feedstock to enable machining and pre-processing of the feedstock. In some embodiments, the dispersed volatile material alters the physical properties of the feedstock, such that the metal or metal alloy, which is difficult to machine due to high ductility, softness, and/or malleability, is easily machined in a pre-processing step. In some embodiments, the pre-processed feedstock, can be fed into a plasma processing apparatus. In some embodiments, the volatile material dispersed within the feedstock material may be vaporized upon exposure to the microwave plasma apparatus. In some embodiments, plasma processing of the pre-processed feedstock material may synthesize pure, spheroidized metal or metal alloy particles, with substantially no contamination of the volatile material ion the final product.

Refractory-reinforced multiphase high entropy alloys (RHEAs) advantageously providing high strength and fracture toughness in an as-AM deposited condition and other conditions are described.

The present invention relates to a Fe-based alloy for melt-solidification-shaping containing : 0.05 mass% ≤ C ≤0.25 mass%, 0.01 mass% ≤ Si ≤ 2.0 mass%, 0.05 mass% ≤ Mn ≤ 2.5 mass%, 2.5 mass% ≤ Ni ≤ 9.0 mass%, 0.1 mass% ≤ Cr ≤ 8.0 mass%, and 0.005 mass% ≤ N ≤ 0.200 mass%, with the balance being Fe and unavoidable impurities, and satisfying: 11.5 < 15C+Mn+0.5Cr+Ni < 20.

The present invention relates to a Fe-based alloy for melt-solidification-shaping containing : 0.05 mass% ≤ C ≤0.25 mass%, 0.01 mass% ≤ Si ≤ 2.0 mass%, 0.05 mass% ≤ Mn ≤ 2.5 mass%, 2.5 mass% ≤ Ni ≤ 9.0 mass%, 0.1 mass% ≤ Cr ≤ 8.0 mass%, and 0.005 mass% ≤ N ≤ 0.200 mass%, with the balance being Fe and unavoidable impurities, and satisfying: 11.5 < 15C+Mn+0.5Cr+Ni < 20.

The present invention relates to pulverulent aluminium alloys having Cu, Zn or Si/Mg as the most relevant alloying element, the alloy further having a content of 1 to 15 wt. % of metals selected from the group M1 comprising Mo, Nb, Zr, Fe, Ti, Ta, V, and lanthanides. Such aluminium alloys can be used in additive manufacturing processes such as selective laser melting for the production of high-strength and hot-crack-free three-dimensional objects. The present invention further relates to methods and devices for producing three-dimensional objects from such aluminium alloys, methods for producing such pulverulent aluminium alloys, three-dimensional objects also produced from such pulverulent aluminium alloys, and specific aluminium alloys.

A cermet contains hard phase particles containing Ti and a binding phase containing at least one of Ni and Co, and 70% or more (by number) of the hard phase particles have a cored structure containing a core and a peripheral portion around the core. The core is composed mainly of at least one of Ti carbide, Ti nitride, and Ti carbonitride, and the peripheral portion is composed mainly of a Ti composite compound containing Ti and at least one selected from W, Mo, Ta, Nb, and Cr. The core has an average particle size α, the peripheral portion has an average particle size β, and α and β satisfy 1.1≦β/α≦1.7.

A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° is 0.41 or more in an X-ray diffraction measurement of the silicon-containing alloy using a CuKα1 ray.

Embodiments disclosed herein relate to the production of amorphous metals having compositions of iron, chromium, molybdenum, carbon and boron for usage in additive manufacturing, such as in layer-by-layer deposition to produce multi-functional parts. Such parts demonstrate ultra-high strength without sacrificing toughness and also maintain the amorphous structure of the materials during and after manufacturing processes. Two additive manufacturing techniques are provided: (1) the complete melting of amorphous powder and re-solidifying to amorphous structure to eliminate the formation of crystalline structure therein by controlling a heating source power and cooling rate without affecting previous deposited layers; and (2) partial melting of the outer surface of the amorphous powder, and solidifying powder particles with each-other without undergoing a complete melting stage. Amorphous alloy compositions have oxygen impurities in low concentration levels to optimize glass forming ability (GFA). Specific techniques of additive manufacturing include those based on lasers, electron beams and ultrasonic sources.

In an electric device the negative electrode active material layer includes a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component, a predetermined composition, and a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° in a predetermined range in an X-ray diffraction measurement using a CuKα1 ray is used as a Si-containing alloy. A solid solution or an oxide-coated solid solution in which a coating layer containing an oxide in a predetermined amount is formed on the particle surface of the solid solution and is used in the positive electrode active material layer.