A semiconductor package device comprises a first dielectric layer, a first conductive pad and a first conductive element. The first dielectric layer has a first surface and a second surface opposite to the first surface. The first dielectric layer defines a first opening tapered from the first surface toward the second surface. The first conductive pad is within the first opening and adjacent to the second surface of the first dielectric layer. At least a portion of the first conductive element is within the first opening. The first conductive element is engaged with (e.g., abuts) a sidewall of the first opening, the first conductive element having a first surface facing toward the first conductive pad, wherein the first surface of the first conductive element is spaced apart from the first conductive pad.

An accurate and compact device for controlling heating of a material in the fluid chamber of a metal droplet jetting device includes a pair of sensors in contact with the material in the fluid chamber. By transmitting a controlled current through the material and detecting the generated voltage across the electrodes (or vice versa), a measure for the resistance of the material is determined. The resistance is temperature-dependent and a good indicator for phase changes in a material. By continually monitoring a resistance related parameter, the heating of the material may be efficiently controlled to maintain the material in its liquid phase during operation.

A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.

A method of bonding a flexible part including inclined leads is provided, and more particularly, a method of bonding a flexible part including inclined leads, in which parts are aligned to bond the parts is provided. According to the method of bonding the flexible part including inclined leads, an electronic part may be easily bonded to a part having an inclined surface.

In conventional fluid discharge devices, a discharge head used should be increased in size according to increase in size of a workpiece such as silicon wafer. However, if the discharge head increases in length, a deformation amount of a mask used for discharging the fluid on the workpiece increases, thereby the discharging amount varies. Discharging the fluid in a reciprocating manner is performed using a fluid discharging device including a head unit having a width shorter than a length of the workpiece. A suction port having opening portions each having a slit shape are disposed on the both sides of the discharge nozzle in a vicinity of the discharge nozzle.

A repair method that includes covering a damaged part of a member to be repaired with a repair material, and heating the repair material to a predetermined temperature to form an alloy layer. At least the surface of the member to be repaired is a first metal such as Cu. The repair material includes a second metal such as Sn. By the heating, the surface of the member to be repaired is integrally joined with a layer of an intermetallic compound and an alloy having a melting point higher than a melting point of either of the first metal or the second metal.

The present disclosure relates a bonding system formed by a process that provides a first substrate and a second substrate. A flux coating is applied to the first contact surface, and a solder-adhesive mixture comprising an adhesive and a plurality of solder elements in at least a portion of the adhesive is applied to the first contact surface. The second substrate is positioned adjacent the solder-adhesive mixture much that a second contact surface of the second surface is opposite the first contact surface, and heat is applied to the solder-adhesive mixture by way of at least one of the first and second contact surfaces. The solder-adhesive mixture is heated to a temperature that is intended to at least partially melt or at least partially vaporize the flux coating upon contact to promote a bonding condition between the solder-adhesive mixture and the first substrate.

A BGA package substrate includes a substrate, a resist formed over the substrate and includes an opening, a land formed over the substrate in the opening, and a solder ball fused to the land, wherein the resist includes a notch at an edge of the opening through which the land is exposed, the notch having a bottom at a position lower than a surface of the land.

A method of pressing solder bumps using a pressing apparatus before testing a wafer, including loading the wafer into the pressing apparatus, where the wafer includes a number of chips, and the wafer is aligned with respect to a test head of the pressing apparatus. The test head includes a substrate which has pressing structures arranged across a surface of the substrate facing the wafer. The pressing structures contact the solder bumps, where the solder bumps include a first surface topology and the pressing structures include a pressing surface topology prior to the contact. The caused contact includes altering a shape of each of the plurality of solder bumps, such that the plurality of solder bumps then a second surface topology after the caused contact, and the second surface topology of the solder bumps matches the pressing surface topology after the caused contact.

A method of pressing solder bumps using a pressing apparatus before testing a wafer, including loading the wafer into the pressing apparatus, where the wafer includes a number of chips, and the wafer is aligned with respect to a test head of the pressing apparatus. The test head includes a substrate which has pressing structures arranged across a surface of the substrate facing the wafer. The pressing structures contact the solder bumps, where the solder bumps include a first surface topology and the pressing structures include a pressing surface topology prior to the contact. The caused contact includes altering a shape of each of the plurality of solder bumps, such that the plurality of solder bumps then a second surface topology after the caused contact, and the second surface topology of the solder bumps matches the pressing surface topology after the caused contact.