B23K20/026

COPPER/CERAMIC BONDED BODY, INSULATING CIRCUIT SUBSTRATE, COPPER/CERAMIC BONDED BODY PRODUCTION METHOD, AND INSULATING CIRCUIT SUBSTRATE PRODUCTION METHOD
20210238102 · 2021-08-05 · ·

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum oxide, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of an interface between the copper member and the ceramic member; and a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase.

COPPER/CERAMIC BONDED BODY, INSULATING CIRCUIT SUBSTRATE, COPPER/CERAMIC BONDED BODY PRODUCTION METHOD, AND INSULATING CIRCUIT SUBSTRATE PRODUCTION METHOD
20210238103 · 2021-08-05 · ·

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum nitride, wherein, the copper member and the ceramic member are bonded to each other, and a Mg solid solution layer is provided between the copper member and the ceramic member and contains Mg in a state of a solid solution in a Cu primary phase.

METHOD FOR PRODUCING A HEAT-SPREADING PLATE, HEAT-SPREADING PLATE, METHOD FOR PRODUCING A SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE
20210202350 · 2021-07-01 · ·

One aspect relates to a method for producing a heat-spreading plate for a circuit carrier. At least one first layer made of a first material having a first coefficient of expansion and at least one second layer made of a second, low-stretch material having a second coefficient of expansion that is smaller than the first coefficient of expansion are bonded to each other at a bonding temperature of 150° C.-300° C. by means of a low-temperature sintering process. At least one bonding layer from a bonding material is formed between the first layer and the second layer and the bonding temperature essentially corresponding to the mounting temperature at which the produced heat spreading plate is connected to at least one circuit carrier.

COPPER/CERAMIC BONDED BODY, INSULATING CIRCUIT SUBSTRATE, COPPER/CERAMIC BONDED BODY PRODUCTION METHOD, AND INSULATING CIRCUIT SUBSTRATE PRODUCTION METHOD
20210178509 · 2021-06-17 · ·

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

METHOD FOR PRODUCTION OF A COMPONENT BY ATOMIC DIFFUSION BONDING
20210260688 · 2021-08-26 ·

A method for producing a component from two plates, which are electrically isolating, at least one is optically transparent, and between them at least one planar conductor section and at least one isolator section are formed, comprises bonding the plates at mutually facing bonding faces, wherein a metal layer is arranged therebetween, and processing the metal layer by local heating using laser radiation such that the metal layer is converted into the at least one isolator section in a part region, and the at least one conductor section is formed adjacent thereto. To form the at least one isolator section, the light path of the laser radiation and the component are moved relative to each other to convert the metal layer into the at least one isolator section over a line or area. Bonding faces of metallic bond layers are polished. The plates are bonded by atomic diffusion bonding.

Repair method and repair material

A repair method that includes covering a damaged part of a member to be repaired with a repair material, and heating the repair material to a predetermined temperature to form an alloy layer. At least the surface of the member to be repaired is a first metal such as Cu. The repair material includes a second metal such as Sn. By the heating, the surface of the member to be repaired is integrally joined with a layer of an intermetallic compound and an alloy having a melting point higher than a melting point of either of the first metal or the second metal.

METHOD OF PREPARING A SURFACE FOR DIFFUSION BONDING AND METHOD OF DIFFUSION BONDING
20210146463 · 2021-05-20 ·

A method of preparing a surface for diffusion bonding comprises contacting a binder material with a discontinuous surface comprising surface regions separated by gaps. The binder material is selectively deposited onto the surface regions and has a sufficient viscosity to form a self-supporting layer without flowing into the gaps. The self-supporting layer of binder material comprises a mass density in a range from about 0.001 g/in.sup.2 to about 0.050 g/in.sup.2. A braze powder is distributed over the self-supporting layer of binder material, and a predetermined amount of the braze powder is attached to the binder material. The discontinuous surface is then heated to remove the binder material and adhere the braze powder to the discontinuous surface. Thus, a prewet surface with a braze deposit thereon is formed.

Connecting conductive pads with post-transition metal and nanoporous metal
11024597 · 2021-06-01 · ·

A first conductive pad is connected to a second conductive pad by using a post-transition metal and a nanoporous metal. An example of the post-transition metal is indium. An example of the nanoporous metal is nanoporous gold. A block of the post-transition metal is formed on the first conductive pad. The block of the post-transition metal is coated with a layer of anti-corrosion material. A block of the nanoporous metal is formed on the second conductive pad. The block of the post-transition metal and the block of the nanoporous metal are thermal compressed to form an alloy between the first conductive pad and the second conductive pad.

METHOD OF SELECTIVELY BONDING BRAZE POWDERS TO A SURFACE
20210146461 · 2021-05-20 ·

A method for selectively adhering braze powders to a surface comprises applying a binder material to a surface, depositing a braze powder on the binder material, and then directing a laser beam onto the braze powder while the laser beam moves along a predetermined path relative to the surface. The laser beam selectively heats the braze powder and the binder material along the predetermined path such that the binder material is removed and the braze powder is sintered and bonded to the surface. Thus, a braze deposit is formed at one or more predetermined locations on the surface. After forming the braze deposit, excess braze powder and binder material, that is, the braze powder and binder material not selectively heated by the laser, are removed from the surface.

METHOD OF SELECTIVELY BONDING BRAZE POWDERS TO A SURFACE
20210146462 · 2021-05-20 ·

A method for selectively adhering braze powders to a surface comprises applying a braze powder to a surface, and then directing a laser beam onto the braze powder while the laser beam moves along a predetermined path relative to the surface. The laser beam selectively heats the braze powder along the predetermined path such that the braze powder is sintered and bonded to the surface. Thus, a braze deposit is formed at one or more predetermined locations on the surface. After forming the braze deposit, excess braze powder, that is, the braze powder not selectively heated by the laser, is removed from the surface.