Patent classifications
B23K20/026
PRINTING METHOD TO SELECTIVELY DEPOSIT BRAZE POWDERS AT ONE OR MORE PREDETERMINED LOCATIONS ON A SURFACE
A printing method for selectively depositing braze powders on a surface comprises extruding a filament from a nozzle moving relative to a surface, where the filament comprises a flowable carrier mixed with a braze powder. As the nozzle moves, the filament is deposited on the surface in a predetermined pattern defined by the motion of the nozzle relative to the surface; thus, the braze powders are deposited at one or more predetermined locations on the surface.
Stabilized transient liquid phase metal bonding material for hermetic wafer level packaging of MEMS devices
In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.
Semiconductor element bonding body, semiconductor device, and method of manufacturing semiconductor element bonding body
A semiconductor element bonding body including: a substrate, in which a concave portion is formed; and a semiconductor element placed in the concave portion to be mounted to the substrate. A portion of the substrate in which the concave portion is formed is made of Cu. The concave portion has a perimeter portion in which a level difference is formed, and the level difference has a height d of 20 μm or more and less than 50 μm. The concave portion has a bottom surface having a flatness degree of λ/8.7 μm or more and λ/1.2 μm or less when a wavelength λ of a laser is 632.8 nm. A metal film is formed on the semiconductor element, and the bottom surface of the concave portion and the metal film are bonded directly to each other.
Bonded body and insulating circuit substrate
A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.
Preform Diffusion Soldering
A method of joining a semiconductor die to a substrate includes: applying a solder preform to a metal region of the semiconductor die or to a metal region of the substrate, the solder preform having a maximum thickness of 30 μm and a lower melting point than both metal regions; forming a soldered joint between the metal region of the semiconductor die and the metal region of the substrate via a diffusion soldering process and without applying pressure directly to the die; and setting a soldering temperature of the diffusion soldering process so that the solder preform melts and fully reacts with the metal region of the semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the melting point of the preform and the soldering temperature.
Batch Diffusion Soldering and Electronic Devices Produced by Batch Diffusion Soldering
A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.
Processes and tooling associated with diffusion bonding the periphery of a cavity-back airfoil
A fixture assembly includes a first fixture portion, a second fixture portion that interfaces with the first fixture portion, and a sub-fixture movably mounted to the first fixture portion. A multiple of actuators selectively move the sub-fixture toward the second fixture portion. A method of manufacturing a fan blade includes deploying the sub-fixture from the first fixture portion to effectuate a peripheral diffusion bond to join the blade body and the cover of the fan blade.
Integrate rinse module in hybrid bonding platform
A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.
METHOD OF DIFFUSION BONDING UTILIZING VAPOR DEPOSITION
A method of diffusion bonding utilizing vapor deposition comprises depositing a coating from a vapor comprising a temperature suppressant element onto a surface of a first component comprising a metal alloy, thereby forming a vapor deposited coating comprising the temperature suppressant element; assembling the first component with a second component comprising a mating surface to form an assembly, the vapor deposited coating contacting the mating surface; and exposing the assembly to a bonding temperature and a compressive force, thereby diffusion bonding the first component to the second component and forming a monolithic third component.
BONDED BODY OF COPPER AND CERAMIC, INSULATING CIRCUIT SUBSTRATE, BONDED BODY OF COPPER AND CERAMIC PRODUCTION METHOD, AND INSULATING CIRCUIT SUBSTRATE PRODUCTION METHOD
A bonded body of copper and ceramic includes: a copper member made of copper or a copper alloy and a ceramic member made of an aluminum oxide, the copper member and the ceramic member being bonded to each other; a magnesium oxide layer which is formed on a ceramic member side between the copper member and the ceramic member; and a Mg solid solution layer which is formed between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, in which one or more active metals selected from Ti, Zr, Nb, and Hf are present in the Mg solid solution layer.