Patent classifications
B23K26/046
Device and method for separating a temporarily bonded substrate stack
A method for separating a temporarily bonded substrate stack by bombardment of a joining layer of the substrate stack by means of laser beams emitted by a laser, characterised in that laser beams of the laser reflected and/or transmitted at the temporarily bonded substrate stack are detected during the bombardment of the joining layer with the laser beams. The invention also relates to a corresponding device.
ELECTROMAGNETIC RADIATION SYSTEM
An electromagnetic radiation system for directing an electromagnetic radiation beam (11) at a target (28) having a first arrangement (12) in which the radiation beam (11) is directed along a marking beam path that is within a marking range of the electromagnetic radiation system and a second arrangement (12, 15) in which the radiation beam (27) is directed along a different beam path (27) that is not within the marking range of the electromagnetic radiation system, wherein a positional relationship between the marking beam path (11) and the different beam path (27) satisfies a predetermined condition at the target (28) when the electromagnetic radiation system is at a predetermined distance (29) from the target (28).
LASER PROCESSING DEVICE, AND LASER PROCESSING METHOD
There is provided a laser processing device that performs laser processing on an object made of a birefringent material, the device including: a light source that outputs laser light; a spatial light modulator that modulates the laser light output from the light source; a focusing lens that focuses the laser light toward the object; and a polarized light component control unit that is a function of the spatial light modulator to control polarized light components of the laser light such that the laser light is focused on one point in the object in a Z direction (optical axis direction).
LASER PROCESSING DEVICE, AND LASER PROCESSING METHOD
There is provided a laser processing device that performs laser processing on an object made of a birefringent material, the device including: a light source that outputs laser light; a spatial light modulator that modulates the laser light output from the light source; a focusing lens that focuses the laser light toward the object; and a polarized light component control unit that is a function of the spatial light modulator to control polarized light components of the laser light such that the laser light is focused on one point in the object in a Z direction (optical axis direction).
LASER PROCESSING DEVICE, AND METHOD FOR MANUFACTURING CHIP
This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.
LASER PROCESSING DEVICE, AND METHOD FOR MANUFACTURING CHIP
This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.
EXPOSURE SYSTEM, LASER CONTROL PARAMETER PRODUCTION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.
EXPOSURE SYSTEM, LASER CONTROL PARAMETER PRODUCTION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.
LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
A control unit performs first processing of irradiating an object with laser light while relatively moving a first converging point and a second converging point along a first line, in a state where a distance between the first converging point and a second converging point is set as a first distance, and performs second processing of irradiating the object with the laser light while relatively moving the first converging point and the second converging point along a second line, in a state where the distance between the first converging point and the second converging point is set to a second distance smaller than the first distance.
LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
A control unit performs first processing of irradiating an object with laser light while relatively moving a first converging point and a second converging point along a first line, in a state where a distance between the first converging point and a second converging point is set as a first distance, and performs second processing of irradiating the object with the laser light while relatively moving the first converging point and the second converging point along a second line, in a state where the distance between the first converging point and the second converging point is set to a second distance smaller than the first distance.