A laser processing system capable of reliably determining an abnormality in a jet during laser process. The laser processing system comprises a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to form a maximum point of velocity of the jet at a position away from the emission opening; a measuring instrument configured to measure any of the velocity of the jet and a sound generated by the jet impinging on a workpiece; and an abnormality determination section configured to determine whether or not output data of the measuring instrument is different from reference data.

The invention relates to a method for welding a first workpiece (11) to a second workpiece (12) by means of a laser. It is an object of the invention to provide a reliable, repeatable and reproducible approach for laser welding of two workpieces one of which consists of a semiconductor material. The method proposed by the invention comprises the following steps: Irradiating the first workpiece (11) with a beam of pulsed laser radiation, wherein the first workpiece (11) consists of a semiconductor material which is transparent at the wavelength of the laser radiation, so that the beam enters the first workpiece (11) through an entrance surface and leaves it through an exit surface, the geometric focus of the beam being positioned in the plane of the exit surface; determining a delocalization of the focus caused by nonlinear interaction of the laser radiation with the semiconductor material; placing the second workpiece (12) against the first workpiece (11); and, again, irradiating the first workpiece (11) with the laser beam of pulsed laser radiation, the focus of the laser radiation being positioned along the beam direction taking into account the determined delocalization so that the intensity maximum is located in the plane of the exit surface forming the interface of the two workpieces (11, 12), whereby the first workpiece (11) is welded to the second workpiece (12). Moreover, the invention relates to a system for welding a first workpiece (11) to a second workpiece (12).

The invention relates to a method for welding a first workpiece (11) to a second workpiece (12) by means of a laser. It is an object of the invention to provide a reliable, repeatable and reproducible approach for laser welding of two workpieces one of which consists of a semiconductor material. The method proposed by the invention comprises the following steps: Irradiating the first workpiece (11) with a beam of pulsed laser radiation, wherein the first workpiece (11) consists of a semiconductor material which is transparent at the wavelength of the laser radiation, so that the beam enters the first workpiece (11) through an entrance surface and leaves it through an exit surface, the geometric focus of the beam being positioned in the plane of the exit surface; determining a delocalization of the focus caused by nonlinear interaction of the laser radiation with the semiconductor material; placing the second workpiece (12) against the first workpiece (11); and, again, irradiating the first workpiece (11) with the laser beam of pulsed laser radiation, the focus of the laser radiation being positioned along the beam direction taking into account the determined delocalization so that the intensity maximum is located in the plane of the exit surface forming the interface of the two workpieces (11, 12), whereby the first workpiece (11) is welded to the second workpiece (12). Moreover, the invention relates to a system for welding a first workpiece (11) to a second workpiece (12).

A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.

A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.

A system includes an energy source, a focusing system, and a controller. The energy source is configured to output energy pulses to the focusing system. A chamber surrounds at least a portion of a metallic substrate and contain a liquid in contact with a surface of the metallic substrate. The controller is configured to cause the energy source to output energy pulses and cause the focusing system to focus a focal volume of the energy pulses at or near the surface of the metallic substrate that is in contact with the liquid to create micro-scale or smaller surface texturing on the metallic substrate.

A system includes an energy source, a focusing system, and a controller. The energy source is configured to output energy pulses to the focusing system. A chamber surrounds at least a portion of a metallic substrate and contain a liquid in contact with a surface of the metallic substrate. The controller is configured to cause the energy source to output energy pulses and cause the focusing system to focus a focal volume of the energy pulses at or near the surface of the metallic substrate that is in contact with the liquid to create micro-scale or smaller surface texturing on the metallic substrate.

An additive manufacturing apparatus that forms an object by repeating additive machining of melting a machining material and adding, onto a workpiece, the machining material solidified includes: a height measurement unit that measures a height of the object formed at a machining position; and a control unit that controls a machining condition for adding the machining material to the machining position on the basis of a measurement result provided by the height measurement unit.

An additive manufacturing apparatus that forms an object by repeating additive machining of melting a machining material and adding, onto a workpiece, the machining material solidified includes: a height measurement unit that measures a height of the object formed at a machining position; and a control unit that controls a machining condition for adding the machining material to the machining position on the basis of a measurement result provided by the height measurement unit.

A focal length adjusting device is provided with: a retention unit for retaining a first lens; a guide unit for supporting the retention unit so as to allow movement along an optical axis of laser light; a stepper motor that has a shaft body and is arranged so that the central axis of the shaft body is orthogonal to the optical axis; and a conversion unit that is interposed between the shaft body and the retention unit and converts rotational movement of the shaft body into linear movement of the retention unit. The conversion unit comprises, between itself and the retention unit, a coupling unit that transmits kinetic force from the conversion unit to the retention unit in a direction parallel to the optical axis but does not transmit same in a direction parallel to the central axis of the shaft body.