A laser processing machine including: a laser source that emits a laser beam; a polarization rotator unit; a beam rotator unit; a lens; and a controller, which apply the laser beam to a workpiece, the polarization rotator unit includes a wave plate and first actuator that rotates the wave plate, the beam rotator unit includes an optical system that adjusts an irradiation angle of the laser beam to the workpiece by making an incident laser beam eccentric to output and making the laser beam incident on the lens at a position eccentric from a central axis, a second actuator rotates the optical system, the lens condenses the laser beam on the workpiece, the controller controls a rotational speed ratio between the first actuator and the second actuator, and adjusts a polarized state of the laser beam by controlling the rotational speed ratio.

A visible light laser system and operation for welding materials together. A blue laser system that forms essentially perfect welds for copper based materials. A blue laser system and operation for welding conductive elements, and in particular thin conductive elements, together for use in energy storage devices, such as battery packs.

A visible light laser system and operation for welding materials together. A blue laser system that forms essentially perfect welds for copper based materials. A blue laser system and operation for welding conductive elements, and in particular thin conductive elements, together for use in energy storage devices, such as battery packs.

A laser-processing apparatus for forming features in a workpiece includes at least one sensor for generating process control data representing a) at least one characteristic of the apparatus either before, during or after the workpiece is processed to form a set of features, b) at least one characteristic of the workpiece either before, during or after the workpiece is processed to form a set of features, and/or c) at least one characteristic of an ambient environment in which the apparatus is located either before, during or after the workpiece is processed to form a set of features. A controller executes, or facilitate execution of, a candidate feature selection process whereby process control data is processed to estimate whether any of the features formed in the workpiece are defective and the location of any feature estimated to be defective is identified.

A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.

A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.

A laser processing apparatus is used which includes: a laser oscillator that oscillates a processing laser beam at a processing point to be processed on a surface of a workpiece; an optical interferometer that emits a measurement beam to the processing point and generates an optical interference intensity signal based on interference generated due to an optical path difference between the measurement beam reflected at the processing point and a reference beam; a first mirror that changes traveling directions of the processing laser beam and the measurement beam; a second mirror that changes an incident angle of the measurement beam onto the first mirror; a lens that focuses the processing laser beam and the measurement beam on the processing point; a memory that stores corrected processing data; a control unit that controls the laser oscillator, the first mirror, and the second mirror based on the corrected processing data; and a measurement processing unit that derives a depth of a keyhole generated at the processing point by the processing laser beam, based on the optical interference intensity signal.

A laser processing method includes a first step of emitting measurement laser light of a first wavelength from the reference surface side to a reference object having a reference surface of which reflectance for the first wavelength is known to obtain a reference light amount as a reflected light amount of the measurement laser light on the reference surface, a second step of emitting the measurement laser light from the first surface side to the object to be processed to obtain a first light amount as a reflected light amount of the measurement laser light on the first surface, and a third step of, after the first step and the second step, calculating a reflectance of the first surface for the first wavelength based on a reflectance of the reference object, the reference light amount, and the first light amount.

A laser processing method includes a first step of emitting measurement laser light of a first wavelength from the reference surface side to a reference object having a reference surface of which reflectance for the first wavelength is known to obtain a reference light amount as a reflected light amount of the measurement laser light on the reference surface, a second step of emitting the measurement laser light from the first surface side to the object to be processed to obtain a first light amount as a reflected light amount of the measurement laser light on the first surface, and a third step of, after the first step and the second step, calculating a reflectance of the first surface for the first wavelength based on a reflectance of the reference object, the reference light amount, and the first light amount.

Herein discussed is a method of heating a material having a surface comprising exposing the surface to an electromagnetic radiation source emitting a first wavelength spectrum; receiving a second wavelength spectrum from the surface using a detector at a sampling frequency; wherein the first wavelength spectrum and the second wavelength spectrum have no greater than 10% of overlap, wherein the overlap is the integral of intensity with respect to wavelength. In an embodiment, the first wavelength spectrum and the second wavelength spectrum have no greater than 5% of overlap or no greater than 3% of overlap or no greater than 1% of overlap or no greater than 0.5% of overlap. In an embodiment, exposing the surface to the radiation source causes the material to sinter at least partially.