An optical device includes a plurality of laser light sources, an output module having an optical modulator, and a time divider that is disposed between the plurality of laser light sources and the output module and that is configured to divide laser beams emitted from the plurality of laser light sources in time.

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

A system includes an orientation determination system comprising a camera where the camera is configured to capture an image of an orientation feature of a physical dental model of a dental arch of a customer with material thermoformed thereon. The orientation determination system is configured to identify an offset of the physical dental model with respect to a fixture plate during positioning or before or after the physical dental model is positioned on the fixture plate by determining an actual orientation of the physical dental model based on the orientation feature. The system also includes a laser trimming system configured to cut the material along a trim line based on the identified offset while the fixture plate is moved about at least two axes to produce a dental aligner specific to the customer and being configured to reposition one or more teeth of the customer.

The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.

In one aspect, an article comprises a substrate that comprises a ceramic matrix composite; and a metal oxide layer disposed on the substrate; where the metal oxide layer has a marking etched into the metal oxide via laser ablation. The markings include alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof. Disclosed herein too is a method comprising disposing upon a ceramic matrix composite a metal oxide layer; and laser ablating the metal oxide layer to etch the metal oxide layer. The etchings produce markings that comprise alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof.

In one aspect, an article comprises a substrate that comprises a ceramic matrix composite; and a metal oxide layer disposed on the substrate; where the metal oxide layer has a marking etched into the metal oxide via laser ablation. The markings include alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof. Disclosed herein too is a method comprising disposing upon a ceramic matrix composite a metal oxide layer; and laser ablating the metal oxide layer to etch the metal oxide layer. The etchings produce markings that comprise alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.