The present invention has an object of providing a stepped wafer that can prevent a resist from remaining after development, and a method for manufacturing the stepped wafer. The stepped wafer according to the present invention is a stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery. The step includes a curved surface with a radius of curvature ranging from 300 m to 1800 m.

To provide a polishing apparatus capable of polishing bevel portions of varying shape by selecting a suitable polishing recipe, based on a state before polishing. The polishing apparatus 100 comprises: a holding/polishing unit 102 for holding and polishing a workpiece W1; and an identifying unit 104 for identifying data 104a associated with a state of the peripheral portion of the substrate W1 before polishing. The holding/polishing unit 102 comprises: a holder 106 for holding and rotating the substrate W1; and a polisher 108 for polishing the peripheral portion of the substrate W1 by pressing a polishing member against the peripheral portion. A polishing-condition determiner 110 determines a polishing condition, based on data 104a indicating to which type, of a plurality of shape-related types, the shape of a given peripheral portion belongs.

A polishing apparatus which can keep a width of a polishing tool constant when a peripheral portion of a substrate is polished by the polishing tool is disclosed. The polishing apparatus includes a substrate holder 3 configured to hold a substrate W and to rotate the substrate W, and a pressing pad 50 configured to press a polishing tool 23 against a peripheral portion of the substrate W held by the substrate holder 3. The pressing pad 50 includes an elastic member 55 having a pressing surface 55a configured to press the polishing tool 23 against the peripheral portion of the substrate W and a support member 56 configured to support the elastic member 55. The support member 56 has a recess 57 formed in a front surface 56a of the support member 56, the elastic member 55 being capable of entering the recess 57.

A grinding method, an OGS substrate and a manufacturing method of an OGS mother substrate are provided. The grinding method is used to grind the OGS substrate comprising a base substrate, wherein a shielding pattern is formed inside a periphery region of the base substrate, a reference mark is formed above the shielding pattern, the grinding method comprises: grinding an edge of the base substrate to form a chamfer; identifying edges of the reference mark and the base substrate; calculating a position distance between an outer edge of the reference mark and the edge of the base substrate corresponding thereto based on the identified edges of the reference mark and the base substrate; judging whether the position distance is smaller than a first distance; if it is judged that the position distance is smaller than the first distance, stopping grinding; otherwise, continuing to grind.

An OGS substrate and a grinding method thereof are provided. The OGS substrate includes a base substrate, wherein a shielding pattern is formed inside a periphery region of the base substrate, a reference mark is formed above the shielding pattern, the grinding method comprises: grinding an edge of the base substrate to form a chamfer; identifying edges of the reference mark and the base substrate; calculating a position distance between an outer edge of the reference mark and the edge of the base substrate corresponding thereto based on the identified edges of the reference mark and the base substrate; judging whether the position distance is smaller than a first distance; if it is judged that the position distance is smaller than the first distance, stopping grinding; otherwise, continuing to grind.

Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

An OGS substrate and a grinding method thereof are provided. The OGS substrate includes a base substrate, wherein a shielding pattern is formed inside a periphery region of the base substrate, a reference mark is formed above the shielding pattern, the grinding method comprises: grinding an edge of the base substrate to form a chamfer; identifying edges of the reference mark and the base substrate; calculating a position distance between an outer edge of the reference mark and the edge of the base substrate corresponding thereto based on the identified edges of the reference mark and the base substrate; judging whether the position distance is smaller than a first distance; if it is judged that the position distance is smaller than the first distance, stopping grinding; otherwise, continuing to grind.

There is provided a substrate processing device. This substrate processing device includes a substrate holder that holds and rotates a substrate, a first processing head that processes a first plane of the substrate held on the substrate holder, and a second processing head that processes a peripheral portion of the substrate held on the substrate holder.

A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.

The present disclosure provides an apparatus and a method for polishing a semiconductor substrate in semiconductor device manufacturing. The apparatus can include: a carrier configured to hold the substrate; a polishing pad configured to polish a first surface of the substrate; a chemical mechanical polishing (CMP) slurry delivery arm configured to dispense a CMP slurry onto the first surface of the substrate; and a pad conditioner configured to condition the polishing pad. In some embodiments, the pad conditioner can include: a conditioning disk configured to scratch the polishing pad; a conditioning arm configured to rotate the conditioning disk; a plurality of magnetic screws configured to secure the conditioning disk onto the conditioning arm and including a respective plurality of screw heads; and a plurality of blocking devices respectively positioned beneath the plurality of screw heads and configured to block debris particles from entering a respective plurality of screw holes.