The polishing apparatus has a polishing unit capable of polishing a peripheral portion of the substrate to form a right-angled cross section. The polishing apparatus includes: a substrate holder that holds and rotates the substrate; guide rollers that support a polishing tape; and a polishing head having a pressing member that presses an edge of the polishing tape against the peripheral portion of the substrate from above. The guide rollers are arranged such that the polishing tape extends parallel to a tangential direction of the substrate and a polishing surface of the polishing tape is parallel to a surface of the substrate. The substrate holder includes: a holding stage that holds the substrate; and a supporting stage that supports a lower surface of the peripheral portion of the substrate in its entirety. The supporting stage rotates in unison with the holding stage.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20 and 50, and said second bevel angle (a2) has a value in a range between 45 and 75.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Provided are a method of polishing a silicon wafer and a method of producing a silicon wafer which can reduce the formation of step-forming microdefects on a silicon wafer. The method includes: a double-side polishing step of performing polishing on front and back surfaces of a silicon wafer; a notch portion polishing step of performing polishing on a beveled portion of a notch portion of the silicon wafer after the double-side polishing step; a peripheral beveled portion polishing step of performing polishing on the beveled portion on the periphery of the silicon wafer other than the beveled portion of the notch portion after the notch portion polishing step; and a finish polishing step of performing finish polishing on the front surface of the silicon wafer after the peripheral beveled portion polishing step. The notch portion polishing step is performed in a state where the front surface is wet with water.

Before a first surface of a substrate is polished using a chemical mechanical process, the substrate is transferred to a modification station. The substrate comprises a side wall connected with the first surface at an edge and a second surface opposite to the first surface and also connected to the side wall. The first surface is substantially flat. The side wall is substantially perpendicular to the first surface. The edge of the substrate is modified at the modification station by removing material from a region of the first surface. The side wall of the substrate is a boundary of the region. The modified edge comprises a modified first surface that tapers within the region towards the second surface. The side wall remains substantially perpendicular to the first surface.

A vacuum chuck includes: a vacuum chuck stage having a circular vacuum surface; a vacuum protection pad provided to the vacuum surface; an annular or arc-shaped concave portion dividing the vacuum surface into a central region located closer to a center of the vacuum surface and an outer circumferential region located on an outer circumferential side; and radially-extending concave portions formed in the central region. The vacuum protection pad has through holes in communication with the radially-extending concave portions, and the vacuum protection pad is bonded to the vacuum surface at the central region excluding the radially-extending concave portions.

There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

A wafer edge polishing apparatus includes a cleaning mechanism exhibiting a superb effect of cleaning slurry residue adhered on a chuck table. This edge polishing device is provided with: a chuck table which sucks/holds a wafer; a rotation drive mechanism which rotates the chuck table; an edge polishing unit which polishes an edge of the wafer while supplying slurry to the wafer, which is rotating while being sucked/held by the chuck table; and a cleaning unit which removes slurry residue on the chuck table. The cleaning unit includes a cleaning head, and cleans the chuck table through high-pressure cleaning and brush-cleaning by using the cleaning head, wherein the cleaning head is provided with a high-pressure jet nozzle and a brush surrounding the periphery of the high-pressure jet nozzle.

A polishing apparatus which can maintain a polishing load within an appropriate range is disclosed. The polishing apparatus includes: a pressing member for pressing a polishing tool against the substrate; an actuator configured to control a pressing force of the pressing member; a positioning member which is movable together with the pressing member; a stopper arranged to restrict movement of the pressing member and the positioning member; a stopper moving mechanism configured to move the stopper in a predetermined direction; a polishing-load detector configured to obtain a load feedback value which varies according to a polishing load applied to the pressing member; and a stopper-speed determining device configured to determine a movement speed of the stopper which can allow the load feedback value to fall within a set range.

The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a wafer, and more particularly to a polishing apparatus and a polishing method for polishing an edge portion of a wafer with use of a polishing tape. The polishing apparatus includes a substrate holder (1) configured to hold and rotate a substrate (W), and a polishing unit (7) configured to polish an edge portion of the substrate (W) with use of a polishing tape (5). The polishing unit (7) includes: a disk head (12) having a circumferential surface for supporting the polishing tape (5); and a head moving device (50) configured to move the disk head (12) in a tangential direction of the substrate (W) and to bring the polishing tape (5) on the circumferential surface of the disk head (12) into contact with the edge portion of the substrate (W).