A grinding wheel includes an elastomerically deformable supporting layer, at least a first metallic surface fastened to the elastomerically deformable supporting layer, the metalic surface being an elastically deformable metal foil and includes abrasive particles attached to the at least one metalic surface. The particles may include at least one of: cubic boron nitride or diamonds. The metal foil may have a thickness of less than 1 mm. The abrasive particles may be bonded galvanically on the metallic surface. The abrasive particles may be bonded on the metalic surface in a plurality of areas having regions without abrasive particles therebetween. The metal foil may be adhesively bonded onto the elastomerically deformable supporting layer. The elastomerically deformable supporting layer may be plastic foam. The elastomerically deformable supporting layer may be adhesively bonded onto a metallic supporting body.

Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.

Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.

Grinding, lapping and polishing basically work by making scratches in the body being ground, lapped or polished. The scratches typically are linear. The scratches gives rise to a directionality component of friction: the friction coefficient is less in the direction along the scratch than in a direction orthogonal, or across, the scratch. In a wafer handling/chucking situation, one wants the wafer to settle on the chuck, which involves the outer regions of the wafer moving radially with respect to the chuck. One can reduce friction in the radial direction by giving the lapping scratches a preferred orientation, namely, radial. This can be achieved by making the final passes of the lapping tool move predominantly in radial directions.

Grinding, lapping and polishing basically work by making scratches in the body being ground, lapped or polished. The scratches typically are linear. The scratches gives rise to a directionality component of friction: the friction coefficient is less in the direction along the scratch than in a direction orthogonal, or across, the scratch. In a wafer handling/chucking situation, one wants the wafer to settle on the chuck, which involves the outer regions of the wafer moving radially with respect to the chuck. One can reduce friction in the radial direction by giving the lapping scratches a preferred orientation, namely, radial. This can be achieved by making the final passes of the lapping tool move predominantly in radial directions.

A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

The present disclosure includes charging members for charging abrasive particles into the surface of a lapping plate. The charging members include one or more channels to permit abrasive slurry to flow through when the charging member is in contact with the lapping plate.

The present disclosure includes charging members for charging abrasive particles into the surface of a lapping plate. The charging members include one or more channels to permit abrasive slurry to flow through when the charging member is in contact with the lapping plate.

Methods of polishing a patterned surface of an electrostatic chucking (ESC) substrate support to be used in plasma assisted or plasma enhanced semiconductor manufacturing chambers are provided herein. In particular, embodiments described herein, provide polishing methods that round and debur the edges of elevated features and remove dielectric material from the non-substrate contacting surfaces of a patterned substrate support to reduce defectivity associated therewith.