The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.

The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.

A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.

The present disclosure includes charging members for charging abrasive particles into the surface of a lapping plate. The charging members include one or more channels to permit abrasive slurry to flow through when the charging member is in contact with the lapping plate.

The present disclosure includes charging members for charging abrasive particles into the surface of a lapping plate. The charging members include one or more channels to permit abrasive slurry to flow through when the charging member is in contact with the lapping plate.

A CMP method includes: provide a substrate with a dielectric layer and a conductive layer, using a mixture of a first polishing liquid and a second polishing liquid to do first CMP polish the substrate placed on the polishing disc to remove the conductive layer covering the upper surface of the intermediate dielectric layer; after the substrate is rinsed with a cleaning solution, the second polishing solution is applied to do second CMP polish on the substrate to remove a part of the dielectric layer, so that the upper surface of the dielectric layer is lower than the upper surface of the conductive layer filled in the groove, so as to ensure that the conductive layer in the groove can protrude from the surface of the dielectric layer. This technique improves product yield for single disc CMP process.

A CMP method includes: provide a substrate with a dielectric layer and a conductive layer, using a mixture of a first polishing liquid and a second polishing liquid to do first CMP polish the substrate placed on the polishing disc to remove the conductive layer covering the upper surface of the intermediate dielectric layer; after the substrate is rinsed with a cleaning solution, the second polishing solution is applied to do second CMP polish on the substrate to remove a part of the dielectric layer, so that the upper surface of the dielectric layer is lower than the upper surface of the conductive layer filled in the groove, so as to ensure that the conductive layer in the groove can protrude from the surface of the dielectric layer. This technique improves product yield for single disc CMP process.

A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.

A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.

In a wafer chuck design featuring pins or mesas making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.