A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

An inner-periphery-side cutoff part where a polishing surface of an upper plate inclines upward toward an inner periphery part of the upper plate and an inner-periphery-side cutoff part where a polishing surface of a lower plate inclines downward toward an inner periphery part of the lower plate are respectively formed on the respective inner periphery parts of the upper plate and the lower plate, or an outer-periphery-side cutoff part where the polishing surface of the upper plate inclines upward toward an outer periphery part of the upper plate and an outer-periphery-side cutoff part where the polishing surface of the lower plate inclines downward toward an outer periphery part of the lower plate are respectively formed on the respective outer periphery parts of the upper plate and the lower plate, or all of them are formed thereon.

An inner-periphery-side cutoff part where a polishing surface of an upper plate inclines upward toward an inner periphery part of the upper plate and an inner-periphery-side cutoff part where a polishing surface of a lower plate inclines downward toward an inner periphery part of the lower plate are respectively formed on the respective inner periphery parts of the upper plate and the lower plate, or an outer-periphery-side cutoff part where the polishing surface of the upper plate inclines upward toward an outer periphery part of the upper plate and an outer-periphery-side cutoff part where the polishing surface of the lower plate inclines downward toward an outer periphery part of the lower plate are respectively formed on the respective outer periphery parts of the upper plate and the lower plate, or all of them are formed thereon.

An object of the present invention is to provide a polishing table capable of preventing peeling or detachment of a coating of the polishing table, thereby to enable an operation for replacement of a polishing pad to be easily conducted. One embodiment of the present invention provides a polishing table having a support surface configured to support a polishing pad, the polishing pad being adapted to be used for polishing a substrate, the polishing table comprising: a stacked body comprising a stack of a porous layer and a non-porous layer, the porous layer including open pores formed in a surface thereof disposed to face a polishing pad; and a resin-based coating material disposed in the open pores so as to form at least a part of the support surface of the polishing table.

An object of the present invention is to provide a polishing table capable of preventing peeling or detachment of a coating of the polishing table, thereby to enable an operation for replacement of a polishing pad to be easily conducted. One embodiment of the present invention provides a polishing table having a support surface configured to support a polishing pad, the polishing pad being adapted to be used for polishing a substrate, the polishing table comprising: a stacked body comprising a stack of a porous layer and a non-porous layer, the porous layer including open pores formed in a surface thereof disposed to face a polishing pad; and a resin-based coating material disposed in the open pores so as to form at least a part of the support surface of the polishing table.

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.

A tool for modifying substrate support elements of a substrate holder, the substrate support elements having support surfaces for supporting a substrate, the tool includes a main body having a main body surface, and multiple protrusions from the main body surface, the multiple protrusions having distal ends configured to contact the support surfaces to modify the substrate support elements. Furthermore, a lithographic apparatus and a method comprising such a tool are provided.