A polishing method capable of removing waviness on a resin-coated surface having a curved surface is provided. The resin-coated surface having the curved surface is polished by using a polishing pad having a polishing surface formed of a hard resin layer.

A polishing method capable of removing waviness on a resin-coated surface having a curved surface is provided. The resin-coated surface having the curved surface is polished by using a polishing pad having a polishing surface formed of a hard resin layer.

A polishing pad capable of removing waviness of a surface of a polishing target having a curved surface is provided. A polishing pad (10) includes a structure (40, 50) including a polishing surface (30) formed of a hard resin layer (40), the structure (40, 50) allowing the polishing surface (30) to follow a curved surface of a polishing target (90).

A polishing pad capable of removing waviness of a surface of a polishing target having a curved surface is provided. A polishing pad (10) includes a structure (40, 50) including a polishing surface (30) formed of a hard resin layer (40), the structure (40, 50) allowing the polishing surface (30) to follow a curved surface of a polishing target (90).

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0. The polishing layer is capable of forming a total texture depth, as measured by Sdr, a parameter defined by the ISO 25178 standard, upon treatment by a surface conditioning disk, in the range of from 0 to 0.4.

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0. The polishing layer is capable of forming a total texture depth, as measured by Sdr, a parameter defined by the ISO 25178 standard, upon treatment by a surface conditioning disk, in the range of from 0 to 0.4.

Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

Disclosed are a polyurethane for use in a polishing layer, and a polishing layer and a polishing pad using the same, the polyurethane including a terminal group represented by the following formula (I): R—(OX).sub.n— (I) wherein R represents a monovalent hydrocarbon group having 1 to 30 carbon atoms that may be substituted with a heteroatom or may be interrupted by a heteroatom, X represents an alkylene group having 2 to 4 carbon atoms, 90 to 100% of the alkylene group being an ethylene group, and n represents a number from 8 to 120.

Disclosed are a polyurethane for use in a polishing layer, and a polishing layer and a polishing pad using the same, the polyurethane including a terminal group represented by the following formula (I): R—(OX).sub.n— (I) wherein R represents a monovalent hydrocarbon group having 1 to 30 carbon atoms that may be substituted with a heteroatom or may be interrupted by a heteroatom, X represents an alkylene group having 2 to 4 carbon atoms, 90 to 100% of the alkylene group being an ethylene group, and n represents a number from 8 to 120.