Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm.sup.2 to 50.0 mm/mm.sup.2.

The present disclosure relates to a polishing pad including a polishing layer. The polishing layer defines a plurality of foaming pores, and a diameter of each of the foaming pores is 1 μm to 10 μm. The present disclosure also relates to a method for manufacturing a polishing pad and a polishing apparatus.

The present disclosure relates to a polishing pad including a polishing layer. The polishing layer defines a plurality of foaming pores, and a diameter of each of the foaming pores is 1 μm to 10 μm. The present disclosure also relates to a method for manufacturing a polishing pad and a polishing apparatus.

A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.

A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.