A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

The CMP laminated polishing pad of the present invention includes at least a polishing layer and an under layer, wherein the under layer contains a resin obtained by polymerizing a polymerizable composition containing: (A) a polyrotaxane monomer having at least two polymerizable functional groups in a molecule; and (B) a polymerizable monomer other than the polyrotaxane monomer having at least two polymerizable functional groups in a molecule. According to the present invention, a polishing pad having not only good wear resistance but also excellent polishing characteristics (high polishing rate, low scratch property, and high flatness) can be provided.

The CMP laminated polishing pad of the present invention includes at least a polishing layer and an under layer, wherein the under layer contains a resin obtained by polymerizing a polymerizable composition containing: (A) a polyrotaxane monomer having at least two polymerizable functional groups in a molecule; and (B) a polymerizable monomer other than the polyrotaxane monomer having at least two polymerizable functional groups in a molecule. According to the present invention, a polishing pad having not only good wear resistance but also excellent polishing characteristics (high polishing rate, low scratch property, and high flatness) can be provided.

A polishing pad includes a textured polishing layer comprising a working surface and a second surface opposite the working surface. The textured polishing layer comprises a polymeric blend comprising thermoplastic urethane in an amount of between 40 and 95 wt. %, and styrenic copolymer in an amount of between 5 and 60 wt. %, based on the total weight of the textured polishing layer.

A polishing pad includes a textured polishing layer comprising a working surface and a second surface opposite the working surface. The textured polishing layer comprises a polymeric blend comprising thermoplastic urethane in an amount of between 40 and 95 wt. %, and styrenic copolymer in an amount of between 5 and 60 wt. %, based on the total weight of the textured polishing layer.

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.

A polishing pad is provided. The polishing pad comprises a polishing layer and a metal-containing layer. The polishing layer has a polishing surface and a backside surface opposite to each other, wherein the backside surface has a plurality of cavities. The metal-containing layer is disposed on the backside surface of the polishing layer and fills into the cavities, wherein a first contact area is between the metal-containing layer and the backside surface of the polishing layer, and the first contact area is larger than the orthogonal projection area of the polishing layer.

A polishing pad is provided. The polishing pad comprises a polishing layer and a metal-containing layer. The polishing layer has a polishing surface and a backside surface opposite to each other, wherein the backside surface has a plurality of cavities. The metal-containing layer is disposed on the backside surface of the polishing layer and fills into the cavities, wherein a first contact area is between the metal-containing layer and the backside surface of the polishing layer, and the first contact area is larger than the orthogonal projection area of the polishing layer.

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.