Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.

A polishing pad for chemical mechanical polishing (CMP) contains a lower polishing pad layer including a bottom surface of the polishing pad, an upper polishing pad layer including a top surface of the polishing pad, tunnels vertically spaced from the top surface of the polishing pad and from the bottom surface of the polishing pad, such that each of the tunnels laterally extends continuously to a respective opening in a peripheral sidewall of the polishing pad, and perforation holes vertically extending from the tunnels to the top surface of the polishing pad.

A polishing pad for chemical mechanical polishing (CMP) contains a lower polishing pad layer including a bottom surface of the polishing pad, an upper polishing pad layer including a top surface of the polishing pad, tunnels vertically spaced from the top surface of the polishing pad and from the bottom surface of the polishing pad, such that each of the tunnels laterally extends continuously to a respective opening in a peripheral sidewall of the polishing pad, and perforation holes vertically extending from the tunnels to the top surface of the polishing pad.

The present invention provides a polishing pad for a wafer polishing apparatus, comprising: an upper pad having a front surface part, which has a cut surface and is in contact with a wafer, a rear surface part positioned on the lower part of the front surface part, and a plurality of grid grooves passing through the front surface part and the rear surface part; a lower pad, which is arranged on the lower part of the upper pad and can be attached to a surface plate; and an adhesion part positioned between the upper pad and the lower pad to couple the upper pad with the lower pad.

The present invention provides a polishing pad for a wafer polishing apparatus, comprising: an upper pad having a front surface part, which has a cut surface and is in contact with a wafer, a rear surface part positioned on the lower part of the front surface part, and a plurality of grid grooves passing through the front surface part and the rear surface part; a lower pad, which is arranged on the lower part of the upper pad and can be attached to a surface plate; and an adhesion part positioned between the upper pad and the lower pad to couple the upper pad with the lower pad.

Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.

Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductor devices. The polishing pad may secure excellent polishing rate and within-wafer non-uniformity by controlling the physical properties such as initial load resistivity and compressive elasticity of the cushion layer and/or the laminate as defined by Equations 1 and 2: $\begin{array}{cc}L{R}_L\left(\%\right)=\frac{T1L-T2L}{T1L-T3L}\times 100& \left[\mathrm{Equation}1\right]\\ C{E}_L\left(\%\right)=\frac{T4L-}{}\end{array}$

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductor devices. The polishing pad may secure excellent polishing rate and within-wafer non-uniformity by controlling the physical properties such as initial load resistivity and compressive elasticity of the cushion layer and/or the laminate as defined by Equations 1 and 2: $\begin{array}{cc}L{R}_L\left(\%\right)=\frac{T1L-T2L}{T1L-T3L}\times 100& \left[\mathrm{Equation}1\right]\\ C{E}_L\left(\%\right)=\frac{T4L-}{}\end{array}$

There is provided a polishing tool for polishing a wafer. The polishing tool includes a base and a polishing layer fixed to the base. The polishing layer includes an electrically conductive material dispersed therein to eliminate static electricity generated when the polishing layer comes into contact with the wafer. Preferably, the electrically conductive material is carbon fiber, and the carbon fiber is included at a content of 3 wt % or more but 15 wt % or less.