A method for raising a polishing pad for polishing a silicon wafer, wherein a polishing pad made of foamed urethane resin is attached to a polishing machine, after dressing is performed, dummy polishing is performed, after processing to remove the polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured, and a rise of the polishing pad subjected to the dummy polishing is judged based on the measured amount of polishing residues. As a result, a method for raising a polishing pad can improve the particle level in the polishing pad life early stage.

There is provided a processing apparatus that polishes the back surface side of a wafer on which devices are formed on the front surface side. The processing apparatus includes a chuck table that holds the wafer and rotates and a polishing unit that forms scratches on the back surface side of the wafer while polishing the back surface side of the wafer. The processing apparatus includes also a scratch determining unit that determines whether or not the scratches exist on the back surface side of the wafer polished by the polishing unit and an informing unit that informs that a region in which the scratches do not exist is included in the wafer when a region for which it has been determined that the scratches do not exist by the scratch determining unit is included in the wafer.

The present disclosure relates to a porous polishing pad including pores by carbon dioxide gas generated by a reaction between a prepolymer and a hydrophilic polymer, and a method of preparing the porous polishing pad.

The present disclosure relates to a porous polishing pad including pores by carbon dioxide gas generated by a reaction between a prepolymer and a hydrophilic polymer, and a method of preparing the porous polishing pad.

Provided is a polishing unit that can reduce penetration of a polishing slurry into a base material layer and that can prevent impairment in polishing performance. A polishing unit (10a) in accordance with a first aspect of the present invention includes: a polishing pad (100a) that includes a polishing layer (101) and a base material layer (103); and a surface plate (150), the base material layer (103) having a diameter smaller than a diameter of the polishing layer (101) and greater than a diameter of the surface plate (150).

Disclosed is a polishing-layer molded body including: a thermoplastic polyurethane that is a polymer of a monomer including: a polymer diol; an organic diisocyanate; a first chain extender including a diol having 4 or less carbon atoms; a second chain extender including a diol having 5 or more carbon atoms, a content ratio of nitrogen derived from an isocyanate group of the organic diisocyanate being 6.3 to 7.4 mass %, and the polishing-layer molded body being non-porous.

Disclosed is a polishing-layer molded body including: a thermoplastic polyurethane that is a polymer of a monomer including: a polymer diol; an organic diisocyanate; a first chain extender including a diol having 4 or less carbon atoms; a second chain extender including a diol having 5 or more carbon atoms, a content ratio of nitrogen derived from an isocyanate group of the organic diisocyanate being 6.3 to 7.4 mass %, and the polishing-layer molded body being non-porous.

A polishing pad for CMP is provided. The polishing pad includes a layer of material having a surface, a plurality of grooves indented into the surface in the layer of material, and a fluorescent indicator in the layer of material. Each of the plurality of grooves has a first depth, the fluorescent indicator has a second depth, and the second depth is equal to or less than the first depth.

A polishing pad for CMP is provided. The polishing pad includes a layer of material having a surface, a plurality of grooves indented into the surface in the layer of material, and a fluorescent indicator in the layer of material. Each of the plurality of grooves has a first depth, the fluorescent indicator has a second depth, and the second depth is equal to or less than the first depth.