The present invention provides a polishing pad, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad, the surface zeta potential and its ratio of the polishing surface are controlled to specific ranges according to the type of polishing slurry, whereby it is possible to improve the characteristics of scratches and surface defects appearing on the surface of the semiconductor substrate and to further enhance the polishing rate.

A base layer, a polishing pad with a base layer and a polishing method are provided. The polishing pad includes a polishing layer and a base layer. The base layer, underlaid below the polishing layer, is a three-dimensional fabric. The three-dimensional fabric comprises a top woven layer, a bottom woven layer, and a supporting woven layer disposed between the top woven layer and the bottom woven layer. The top woven layer and the bottom woven layer are respectively woven by a plurality of first set of yarns and a plurality of second set of yarns. The supporting woven layer comprises a plurality of supporting yarns interconnecting the top woven layer and the bottom woven layer, so that a space exists between the top woven layer and the bottom woven layer.

A polishing pad for polishing a workpiece to a mirror finish is attached to a rotatable polishing table of a chemical mechanical polishing apparatus. The workpiece, such as a metal body, is held by a carrier and pressed against the polishing pad. This polishing pad includes: an elastic pad having a polishing surface; a deformable base layer that supports the elastic pad; and an adhesive layer that joins the elastic pad to the base layer.

A polishing pad for polishing a workpiece to a mirror finish is attached to a rotatable polishing table of a chemical mechanical polishing apparatus. The workpiece, such as a metal body, is held by a carrier and pressed against the polishing pad. This polishing pad includes: an elastic pad having a polishing surface; a deformable base layer that supports the elastic pad; and an adhesive layer that joins the elastic pad to the base layer.

Disclosed is a non-porous molded article for a polishing layer, the non-porous molded article including a thermoplastic polyurethane, wherein the thermoplastic polyurethane has a maximum value of a loss tangent (tan 5) in a range of −70 to −50° C. of 4.00×10.sup.−2 or less. Preferably, the thermoplastic polyurethane is obtained by polymerization of a polymer diol having a number average molecular weight of 650 to 1400, an organic diisocyanate, and a chain extender, and a content ratio of nitrogen derived from an isocyanate group of the organic diisocyanate is 5.7 to 6.5 mass %.

Disclosed is a non-porous molded article for a polishing layer, the non-porous molded article including a thermoplastic polyurethane, wherein the thermoplastic polyurethane has a maximum value of a loss tangent (tan 5) in a range of −70 to −50° C. of 4.00×10.sup.−2 or less. Preferably, the thermoplastic polyurethane is obtained by polymerization of a polymer diol having a number average molecular weight of 650 to 1400, an organic diisocyanate, and a chain extender, and a content ratio of nitrogen derived from an isocyanate group of the organic diisocyanate is 5.7 to 6.5 mass %.

The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.

The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.

A polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and a curing section disposed between the feed section and the take-up section, the curing section comprising one or both of a thermal curing device and an electromagnetic curing device.

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ≧10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.