A polishing pad comprising a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated, and having a cross section cut in a surface direction of the knitted fabric, as a polishing surface.

A polishing pad comprising a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated, and having a cross section cut in a surface direction of the knitted fabric, as a polishing surface.

The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 μm rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 μm rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

The present invention relates to a microballoon. The microballoon is made of polyurethane (urea). The microballoon is characterized in that an inner surface of the microballoon contains ionic groups. According to the present invention, through use for a CMP polishing pad, affinity with a slurry liquid for polishing is improved, and thus it is possible to provide a microballoon by which good polishing characteristics may be exhibited without lowering the resin strength of a polishing pad.

The present invention relates to a microballoon. The microballoon is made of polyurethane (urea). The microballoon is characterized in that an inner surface of the microballoon contains ionic groups. According to the present invention, through use for a CMP polishing pad, affinity with a slurry liquid for polishing is improved, and thus it is possible to provide a microballoon by which good polishing characteristics may be exhibited without lowering the resin strength of a polishing pad.

A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.

A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.

An abrasive article can include a body including agglomerated first abrasive particles and unagglomerated second abrasive particles contained in a bond material. The first abrasive particles can include chromium oxide. The second abrasive particles can be elongated. The bond material can include an inorganic material including a vitreous phase.

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.