Patent classifications
B24B37/26
SLURRY RECYCLING FOR CHEMICAL MECHANICAL POLISHING SYSTEM
The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is configured to dispense a slurry on the pad, and a flotation module configured to process a first fluid sprayed from the pad. The flotation module further includes an outlet fluidly connected to the second feeder and configured to output a second fluid, and a first tank configured to store a plurality of chemicals where the plurality of chemicals include a frother and a collector configured to chemically bond with chemicals in the first fluid.
SLURRY RECYCLING FOR CHEMICAL MECHANICAL POLISHING SYSTEM
The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is configured to dispense a slurry on the pad, and a flotation module configured to process a first fluid sprayed from the pad. The flotation module further includes an outlet fluidly connected to the second feeder and configured to output a second fluid, and a first tank configured to store a plurality of chemicals where the plurality of chemicals include a frother and a collector configured to chemically bond with chemicals in the first fluid.
Polishing pad
A polishing pad has a disk-shaped substrate and a polishing layer of which an upper surface side is adhered to the substrate. The polishing layer includes a plurality of through-holes which penetrate the polishing pad vertically and which are supplied with a polishing liquid, and a plurality of grooves which are formed on the lower surface side of the polishing pad and which are connected to the through-holes. The plurality of through-holes are formed such as to surround the center of the polishing layer, and the plurality of grooves are formed radially from the plurality of through-holes toward the outer periphery of the polishing layer.
Polishing pad
A polishing pad has a disk-shaped substrate and a polishing layer of which an upper surface side is adhered to the substrate. The polishing layer includes a plurality of through-holes which penetrate the polishing pad vertically and which are supplied with a polishing liquid, and a plurality of grooves which are formed on the lower surface side of the polishing pad and which are connected to the through-holes. The plurality of through-holes are formed such as to surround the center of the polishing layer, and the plurality of grooves are formed radially from the plurality of through-holes toward the outer periphery of the polishing layer.
Substrate processing apparatus
Provided is a substrate processing apparatus. The substrate processing apparatus comprises a polishing table; a polishing pad disposed on an upper surface of the polishing table; a conditioner including a conditioner head, a disk holder movably coupled to the conditioner head in a vertical direction, and a conditioning disk mounted to the disk holder and in contact with the polishing pad; and a thickness measuring unit of obtaining the thickness of the polishing pad from the relative moving distance of the disk holder with respect to the conditioner head, wherein the information of the relative moving distance is received from sensing unit.
Substrate processing apparatus
Provided is a substrate processing apparatus. The substrate processing apparatus comprises a polishing table; a polishing pad disposed on an upper surface of the polishing table; a conditioner including a conditioner head, a disk holder movably coupled to the conditioner head in a vertical direction, and a conditioning disk mounted to the disk holder and in contact with the polishing pad; and a thickness measuring unit of obtaining the thickness of the polishing pad from the relative moving distance of the disk holder with respect to the conditioner head, wherein the information of the relative moving distance is received from sensing unit.
POLISHING PAD AND METHOD FOR MANUFACTURING SAME
A polishing layer having an endpoint detection window is manufactured in the following manner. First, a curing agent and a polymer which form the endpoint detection window are mixed, and then the mixture is poured into a mold to form a columnar material. Next, the roughness of the outer peripheral surface of the columnar material is adjusted, and a plurality of projections and recesses are formed on the outer peripheral surface. Next, in a state where the columnar material is housed in a mold frame, the mixture obtained by mixing the polymer and the curing agent is poured into the mold frame and solidified to create a polyurethane polyurea resin molded article. Next, the polyurethane polyurea resin molded article is horizontally cut with a necessary thickness so as to form a sheet-like member, and the sheet-like member forms a polishing layer having the endpoint detection window.
POLISHING PAD AND METHOD FOR MANUFACTURING SAME
A polishing layer having an endpoint detection window is manufactured in the following manner. First, a curing agent and a polymer which form the endpoint detection window are mixed, and then the mixture is poured into a mold to form a columnar material. Next, the roughness of the outer peripheral surface of the columnar material is adjusted, and a plurality of projections and recesses are formed on the outer peripheral surface. Next, in a state where the columnar material is housed in a mold frame, the mixture obtained by mixing the polymer and the curing agent is poured into the mold frame and solidified to create a polyurethane polyurea resin molded article. Next, the polyurethane polyurea resin molded article is horizontally cut with a necessary thickness so as to form a sheet-like member, and the sheet-like member forms a polishing layer having the endpoint detection window.
Polishing Article, Polishing System and Method of Polishing
A polishing article includes a polishing layer having a working surface including at least one multi-cell structure disposed on the working surface. The multi-cell structure includes three cells, defined as a first cell, a second cell and a third cell. Each of the three cells includes at least one sidewall defining a cell shape. The first cell and the second cell include a first common sidewall including a first channel, having a first channel length, allowing fluid communication between the first cell and the second cell, and a first axis perpendicular to the first channel length and substantially parallel to the working surface. Further, the second cell and the third cell include a second common sidewall including a second channel, having a second channel length, allowing fluid communication between the second cell and the third cell, and a second axis perpendicular to the second channel length and substantially parallel to the working surface. An included angle between the first axis and the second axis is from 0° to less than 180°.
Polishing Article, Polishing System and Method of Polishing
A polishing article includes a polishing layer having a working surface including at least one multi-cell structure disposed on the working surface. The multi-cell structure includes three cells, defined as a first cell, a second cell and a third cell. Each of the three cells includes at least one sidewall defining a cell shape. The first cell and the second cell include a first common sidewall including a first channel, having a first channel length, allowing fluid communication between the first cell and the second cell, and a first axis perpendicular to the first channel length and substantially parallel to the working surface. Further, the second cell and the third cell include a second common sidewall including a second channel, having a second channel length, allowing fluid communication between the second cell and the third cell, and a second axis perpendicular to the second channel length and substantially parallel to the working surface. An included angle between the first axis and the second axis is from 0° to less than 180°.