A substrate warpage correction method according to this disclosure corrects warpage of a substrate without performing a process on a front surface of the substrate. The substrate warpage correction method includes a surface roughening of performing a surface roughening process on a rear surface of the substrate using a surface roughening processing apparatus configured to be able to perform the surface roughening process on the rear surface of the substrate, to form grooves in the rear surface to thereby correct the warpage of the substrate.

A chemical mechanical polishing system includes a chuck assembly with a chuck for holding a substrate, a motor to rotate the chuck about a first axis, and a pad carrier assembly. The pad carrier assembly includes a movable support, a lateral actuator coupled the support to move the support along the radial direction, a flexure having a first end secured to the support and a second end, a pad carrier/attachment secured to a bottom side of the second end of the flexure for receiving and holding a polishing pad, a support arm extending from the support over the flexure such that the support arm and the flexure move together along the radial direction with the second end of the flexure vertically movable relative to the support arm, and a pad carrier actuator secured to the arm to apply a downward pressure to a top of the flexure.