An apparatus for processing a substrate, the apparatus comprising a polishing assembly and a controller. The polishing assembly is configured to (a) polish a surface of the substrate. The controller is configured to (b) detect a first substrate measurement corresponding to a first region of the substrate, (c) detect a second substrate measurement corresponding to a second region of the substrate; (d) determine a difference between the first substrate measurement at the first region and the second substrate measurement at the second region; stop the polishing of the surface of the substrate in response to a determination that the difference between the first substrate measurement and the second substrate measurement is within a tolerance threshold; and repeat (a)-(d) in response to a determination that the difference between the first substrate measurement and the second substrate measurement is outside of the tolerance threshold.

A method for producing bearing components includes providing a first bearing component, a second bearing component, a first production line, and a second production line. The first production line has a first grinding machine, a first honing machine, a first measuring unit, and a first conveyor unit. The second production line has a second grinding machine, a second honing machine, and a second conveyor unit. The method also includes grinding and honing the first bearing component, measuring a first dimension of the first bearing component, grinding and honing the second bearing component, and combining the first bearing component and the second bearing component to form a roller bearing or a slide bearing. The first production line and the second production line are operated in a synchronized manner such that the second grinding machine or the second honing machine is operated under closed-loop control using the first dimension.

A method for producing bearing components includes providing a first bearing component, a second bearing component, a first production line, and a second production line. The first production line has a first grinding machine, a first honing machine, a first measuring unit, and a first conveyor unit. The second production line has a second grinding machine, a second honing machine, and a second conveyor unit. The method also includes grinding and honing the first bearing component, measuring a first dimension of the first bearing component, grinding and honing the second bearing component, and combining the first bearing component and the second bearing component to form a roller bearing or a slide bearing. The first production line and the second production line are operated in a synchronized manner such that the second grinding machine or the second honing machine is operated under closed-loop control using the first dimension.

The invention concerns a method and a grinding machine (4) for machining a workpiece (1) comprising a desired helical groove. The method comprises a step of grinding a calibration groove (12) on the surface (10) of the workpiece according to a predetermined helix pattern of the desired helical groove and by means of an abrasive wheel (2) of the grinding machine. The calibration groove (12) has a calibration length that is equal or smaller than the predetermined length of the desired helical groove and has a calibration depth (120) that is smaller than the predetermined depth of the desired helical groove. The method comprises steps of: determine an abrasive wheel dimension (22, 23, 24, 25) of the abrasive wheel (2) by measuring the calibration depth; and using the determined wheel dimension (22, 23, 24, 25) for grinding the desired helical groove by means of the abrasive wheel (2).

The invention concerns a method and a grinding machine (4) for machining a workpiece (1) comprising a desired helical groove. The method comprises a step of grinding a calibration groove (12) on the surface (10) of the workpiece according to a predetermined helix pattern of the desired helical groove and by means of an abrasive wheel (2) of the grinding machine. The calibration groove (12) has a calibration length that is equal or smaller than the predetermined length of the desired helical groove and has a calibration depth (120) that is smaller than the predetermined depth of the desired helical groove. The method comprises steps of: determine an abrasive wheel dimension (22, 23, 24, 25) of the abrasive wheel (2) by measuring the calibration depth; and using the determined wheel dimension (22, 23, 24, 25) for grinding the desired helical groove by means of the abrasive wheel (2).

A method capable of accurately obtaining polishing-rate responsiveness to a change in pressure for pressing a workpiece, such as a wafer, against a polishing pad is disclosed. The method includes: creating an estimated polishing-rate responsiveness profile using simulation, the estimated polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the first pressure chamber; creating an actual polishing-rate responsiveness profile using polishing results of a workpiece, the actual polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the second pressure chamber, and creating a hybrid polishing-rate responsiveness profile by combining the estimated polishing-rate responsiveness profile and the actual polishing-rate responsiveness profile.

A method capable of accurately obtaining polishing-rate responsiveness to a change in pressure for pressing a workpiece, such as a wafer, against a polishing pad is disclosed. The method includes: creating an estimated polishing-rate responsiveness profile using simulation, the estimated polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the first pressure chamber; creating an actual polishing-rate responsiveness profile using polishing results of a workpiece, the actual polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the second pressure chamber, and creating a hybrid polishing-rate responsiveness profile by combining the estimated polishing-rate responsiveness profile and the actual polishing-rate responsiveness profile.

The present invention relates to a technique of calculating a responsiveness of a polishing rate to change in a pressure to press a workpiece, such as a wafer, a substrate, or a panel, for use in manufacturing of semiconductor devices, against a polishing pad. A method includes: performing simulation to calculate a pressing-pressure responsiveness profile indicating a distribution of pressing pressure, which is to be applied from the workpiece to a polishing pad (2), changed in response to a change in unit pressure in the pressure chamber of a polishing head (7); pressing the workpiece against the polishing pad to polish the workpiece, while a predetermined pressure is maintained in the pressure chamber; creating a polishing-rate profile indicating a distribution of polishing rate of the polished workpiece; and creating the polishing-rate responsiveness profile based on the pressing-pressure responsiveness profile, the predetermined pressure, and the polishing-rate profile.

The present invention relates to a technique of calculating a responsiveness of a polishing rate to change in a pressure to press a workpiece, such as a wafer, a substrate, or a panel, for use in manufacturing of semiconductor devices, against a polishing pad. A method includes: performing simulation to calculate a pressing-pressure responsiveness profile indicating a distribution of pressing pressure, which is to be applied from the workpiece to a polishing pad (2), changed in response to a change in unit pressure in the pressure chamber of a polishing head (7); pressing the workpiece against the polishing pad to polish the workpiece, while a predetermined pressure is maintained in the pressure chamber; creating a polishing-rate profile indicating a distribution of polishing rate of the polished workpiece; and creating the polishing-rate responsiveness profile based on the pressing-pressure responsiveness profile, the predetermined pressure, and the polishing-rate profile.

A substrate polishing apparatus includes a top ring for pressing a substrate against a polishing pad to perform substrate polishing; a spectrum generating unit that directs light onto a surface of the substrate of interest for polishing, receives reflected light, and calculates a reflectivity spectrum corresponding to the wavelength of the reflected light; and a storage that stores a plurality of thickness estimating algorithms for estimating the thickness of the polished surface in accordance with the reflectivity spectrum. A plurality of thickness estimating algorithms is selected among the thickness estimating algorithms stored in the storage, and a switching condition is set. The thickness of the polished surface is estimated by using the set thickness estimating algorithms, and if the switching condition is satisfied, the thickness estimating algorithm to be applied is switched.