B24D3/06

Methods of forming abrasive articles
09744646 · 2017-08-29 · ·

An abrasive article, comprising a polycrystalline material comprising abrasive grains and a filler material having an average negative coefficient of thermal expansion (CTE) within a range of temperatures between about 70 K to about 1500 K. A method of forming an abrasive article, comprising preparing an abrasive material, preparing a filler material having an average negative coefficient of thermal expansion (CTE) within a range of temperatures between about 150 K to about 1500 K, and forming a polycrystalline material comprising grains of the abrasive material and the filler material.

EDGE FINISHING APPARATUS AND METHODS FOR LAMINATE PRODUCTION
20170232571 · 2017-08-17 ·

Embodiments of a grinding wheel and methods for edge finishing glass substrates are disclosed. In one or more embodiments, the grinding wheel includes a metal matrix structure, a plurality of primary abrasive particles and a plurality of secondary abrasive particles bonded to the matrix structure, wherein one of the primary abrasive diamond particles and secondary abrasive particles comprises resin bond diamond particles. In some embodiments, the other of the primary abrasive diamond particles and secondary abrasive particles comprises metal bond diamond particles.

Abrasive article with hybrid bond

An abrasive article includes abrasive particles contained within a hybrid bond that may include a metal bond material and an organic bond material, the article having an average thickness of 250 microns or less and the metal bond material including a solid solution phase and an intermetallic phase distinct from the solid solution phase.

Abrasive article with hybrid bond

An abrasive article includes abrasive particles contained within a hybrid bond that may include a metal bond material and an organic bond material, the article having an average thickness of 250 microns or less and the metal bond material including a solid solution phase and an intermetallic phase distinct from the solid solution phase.

TOOL FOR MACHINING MATERIAL AND METHOD OF PRODUCING SAME
20170216995 · 2017-08-03 ·

The invention concerns a tool for machining of materials, specifically a grinding tool, which has a substantially rotationally symmetrical shape with respect to a rotation axis (R), the tool comprising an outer shell centred about the rotation axis and defining an internal space therein, wherein at least a part of a surface of the outer shell is provided with an abrasive coating or component, wherein the outer shell encases an internal skeleton structure in the internal space, the internal skeleton being integral with the outer shell and defining void volumes in the internal space thereby establishing material and void volumes of the internal space, and wherein the material to void ratio M/V is distributed substantially identically along each radius (r) centred around the rotation axis (R) and its corresponding symmetrical radius (r′). The invention also concerns a method for producing such tool.

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL WAFER
20170221697 · 2017-08-03 · ·

In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL WAFER
20170221697 · 2017-08-03 · ·

In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

Rotary dresser and manufacturing method therefor

A rotary dresser includes a cored bar, an electroformed layer, and superabrasive grains fixed to an outer circumferential surface of the electroformed layer, and a plurality of island regions in which a plurality of superabrasive grains is gathered is provided at certain intervals. Since a plurality of the island regions in which a plurality of the superabrasive grains is gathered is provided at certain intervals, the same degree of dressing accuracy can be obtained as in a case in which expensive large superabrasive grains are fixed at a low density using cheap and small superabrasive grains, it is possible to decrease the contact area of a single superabrasive grain, and favorable cutting quality can be obtained.

Rotary dresser and manufacturing method therefor

A rotary dresser includes a cored bar, an electroformed layer, and superabrasive grains fixed to an outer circumferential surface of the electroformed layer, and a plurality of island regions in which a plurality of superabrasive grains is gathered is provided at certain intervals. Since a plurality of the island regions in which a plurality of the superabrasive grains is gathered is provided at certain intervals, the same degree of dressing accuracy can be obtained as in a case in which expensive large superabrasive grains are fixed at a low density using cheap and small superabrasive grains, it is possible to decrease the contact area of a single superabrasive grain, and favorable cutting quality can be obtained.

SUBSTRATES FOR POLYCRYSTALLINE DIAMOND CUTTERS WITH UNIQUE PROPERTIES
20170266784 · 2017-09-21 ·

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.