A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. In some implementations of the present disclosure, the advanced polishing article comprises a polymeric sheet having a polishing surface with a raised surface texture or micro-features and/or a plurality of grooves or macro-features formed in the polishing surface. In some implementations, the raised surface texture is embossed, etched, machined or otherwise formed in the polishing surface prior to installing and using the advanced polishing article in a polishing system. In one implementation, the raised features have a height within one order of magnitude of the features removed from the substrate during polishing.

A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. In some implementations of the present disclosure, the advanced polishing article comprises a polymeric sheet having a polishing surface with a raised surface texture or micro-features and/or a plurality of grooves or macro-features formed in the polishing surface. In some implementations, the raised surface texture is embossed, etched, machined or otherwise formed in the polishing surface prior to installing and using the advanced polishing article in a polishing system. In one implementation, the raised features have a height within one order of magnitude of the features removed from the substrate during polishing.

Embodiments relate to a polishing pad, which comprises a window having a hardness similar to that of its polishing layer. Since the polishing pad comprises a window having a hardness and a polishing rate similar to those of its polishing layer, it can produce an effect of preventing scratches on a wafer during a CMP process. In addition, the polishing layer and the window of the polishing pad have a similar rate of change in hardness with respect to temperature, so that they can maintain a similar hardness despite a change in temperature during the CMP process.

A synthetic grindstone for performing surface processing includes: abrasive grains; a vitrified-material binder configured to retain the abrasive grains in a dispersed state; and a filler arranged in the binder in a dispersed state. The filler includes at least one of a first filler having an average grain size larger than an abrasive grain size of the abrasive grains, a second filler having an electrical conductivity, or a third filler having a hardness higher than a hardness of an object to be ground.

A synthetic grindstone for performing surface processing includes: abrasive grains; a vitrified-material binder configured to retain the abrasive grains in a dispersed state; and a filler arranged in the binder in a dispersed state. The filler includes at least one of a first filler having an average grain size larger than an abrasive grain size of the abrasive grains, a second filler having an electrical conductivity, or a third filler having a hardness higher than a hardness of an object to be ground.

Embodiments relate to a polishing pad, which comprises a window having a hardness similar to that of its polishing layer. Since the polishing pad comprises a window having a hardness and a polishing rate similar to those of its polishing layer, it can produce an effect of preventing scratches on a wafer during a CMP process. In addition, the polishing layer and the window of the polishing pad have a similar rate of change in hardness with respect to temperature, so that they can maintain a similar hardness despite a change in temperature during the CMP process.

Embodiments relate to a polishing pad, which comprises a window having a hardness similar to that of its polishing layer. Since the polishing pad comprises a window having a hardness and a polishing rate similar to those of its polishing layer, it can produce an effect of preventing scratches on a wafer during a CMP process. In addition, the polishing layer and the window of the polishing pad have a similar rate of change in hardness with respect to temperature, so that they can maintain a similar hardness despite a change in temperature during the CMP process.

Implementations disclosed herein generally relate to polishing articles and methods for manufacturing polishing articles used in polishing processes. More specifically, implementations disclosed herein relate to porous polishing pads produced by processes that yield improved polishing pad properties and performance, including tunable performance. Additive manufacturing processes, such as three-dimensional printing processes provides the ability to make porous polishing pads with unique properties and attributes.

Implementations disclosed herein generally relate to polishing articles and methods for manufacturing polishing articles used in polishing processes. More specifically, implementations disclosed herein relate to porous polishing pads produced by processes that yield improved polishing pad properties and performance, including tunable performance. Additive manufacturing processes, such as three-dimensional printing processes provides the ability to make porous polishing pads with unique properties and attributes.

A synthetic grindstone for performing surface processing includes: abrasive grains; a vitrified-material binder configured to retain the abrasive grains in a dispersed state; and a filler arranged in the binder in a dispersed state. The filler includes at least one of a first filler having an average grain size larger than an abrasive grain size of the abrasive grains, a second filler having an electrical conductivity, or a third filler having a hardness higher than a hardness of an object to be ground.