In micromechanical pressure sensor device and a corresponding production method, the micromechanical pressure sensor device is provided with a first diaphragm; an adjacent first cavity; a first deformation detection device situated in and/or on the first diaphragm for detecting a deformation of the first diaphragm as a consequence of an applied external pressure change and as a consequence of an internal mechanical deformation of the pressure sensor device; a second diaphragm; an adjacent second cavity; and a second deformation detection device situated in and/or on the second diaphragm for detecting a deformation of the second diaphragm as a consequence of the internal mechanical deformation of the pressure sensor device, where the second diaphragm is developed in such a way that it is not deformable as a consequence of the external pressure change.

In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer are removed.

The present disclosure relates integrated chip structure including a MEMS actuator. The MEMS actuator includes an anchor having a first plurality of branches extending outward from a central region of the anchor. The first plurality of branches respectively include a first plurality of fingers. A proof mass surrounds the anchor and includes a second plurality of branches extending inward from an interior sidewall of the proof mass. The second plurality of branches respectively include a second plurality of fingers interleaved with the first plurality of fingers as viewed in a top-view. One or more curved cantilevers are coupled between the proof mass and a frame wrapping around the proof mass. The one or more curved cantilevers have curved outer surfaces having one or more inflection points as viewed in the top-view.

Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.

A piezoelectric microelectromechanical systems (MEMS) microphone is provided comprising a substrate including walls defining a cavity and at least one of the walls defining an anchor region, a piezoelectric film layer supported by the substrate at the anchor region such that the piezoelectric film layer is cantilevered, the piezoelectric film layer being formed to introduce differential stress between a front surface of the piezoelectric film layer oriented away from the cavity and a back surface of the piezoelectric film layer oriented towards the cavity such that the piezoelectric film layer is bent into the cavity, and an electrode disposed over the piezoelectric film layer and adjacent the anchor region. A method of manufacturing such a MEMS microphone is also provided.

A MEMS microphone includes a substrate having a cavity, a diaphragm disposed above the substrate to correspond to the cavity, and a back plate disposed above the diaphragm. The diaphragm has a plurality of grooves for adjusting an elastic strength of the diaphragm.

The present invention discloses a MEMS microphone, which includes a substrate with a back cavity, a connection part, and a capacitive system arranged in the connection part. The capacitive system includes a first electrode connected to the inner wall of connection part, and a second electrode disposed on the substrate near the first electrode and spaced from the first electrode. The second electrode has two shape separation gaps. The shape separation gap includes a splitting gap in the second electrode, and two end gaps. The second electrode is divided into an effective vibration area and an auxiliary area by adopting a cracking gap structure. While improving the sensitivity of the first electrode, the stress concentration point of the second electrode is directed to the edge of the second electrode, so as to disperse the stress under the action of loud pressure.

A piezoelectric microelectromechanical systems diaphragm microphone can be mounted on a printed circuit board. The microphone can include a substrate with an opening between a bottom end of the substrate and a top end of the substrate. The microphone can have two or more piezoelectric film layers disposed over the top end of the substrate and defining a diaphragm structure. Each of the two or more piezoelectric film layers can have a predefined residual stress that substantially cancel each other out so that the diaphragm structure is substantially flat with substantially zero residual stress. The microphone can include one or more electrodes disposed over the diaphragm structure. The diaphragm structure is configured to deflect when the diaphragm is subjected to sound pressure via the opening in the substrate.

A MEMS device having a body with a first and a second surface, a first portion and a second portion. The MEMS device further has a cavity extending in the body from the second surface; a deformable portion between the first surface and the cavity; and a piezoelectric actuator arranged on the first surface, on the deformable portion. The deformable portion has a first region with a first thickness and a second region with a second thickness greater than the first thickness. The second region is adjacent to the first region and to the first portion of the body.

A method for forming a microscale device may include growing, by a chemical vapor deposition, a patterned forest of vertically aligned carbon nanotubes, wherein the patterned forest defines a component of the microscale device, and applying a conformal non-metal coating to the vertically aligned carbon nanotubes throughout the patterned forest, wherein the conformal non-metal coating comprises a substantially uniform thickness along a length of the vertically aligned carbon nanotubes. The method may also include connecting adjacent vertically aligned carbon nanotubes together with the conformal non-metal coating without filling interstices between the adjacent vertically aligned carbon nanotubes, wherein the connecting of the vertically aligned carbon nanotubes is configured to increase a strength of the vertically aligned carbon nanotubes of the patterned forest above a threshold level to withstand forces applied during a wet etching process, and infiltrating the interstices between the adjacent vertically aligned carbon nanotubes with a metallic material.