Patent classifications
B81B3/0078
Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
Micromechanical pressure sensor device and a corresponding production method
A micromechanical pressure sensor device including a semiconductor base substrate of a first doping type on which an intermediate layer of the first doping type is situated, a cavity sealed by a sealing layer of a second doping type and including a reference pressure, a first grating of the second doping type, suspended inside the cavity on a buried connection region of the second doping type, the buried connection region laterally extending away from the cavity into the semiconductor base material, a second grating of the second doping type, situated on a side of the diaphragm region pointing to the cavity and suspended on the diaphragm region, the first grating and the second grating being electrically insulated from each other and forming a capacitance, a first connection electrically connected to the first grating via the buried connection region, and a second connection electrically connected to the second grating.
Method for producing a MEMS sensor, and MEMS sensor
In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.
DEFORMABLE MEMBRANE AND A COMPENSATING STRUCTURE THEREOF
A sensor includes a substrate, an electrode, a deformable membrane, and a compensating structure. The substrate includes a first side and a second side. The first side is opposite to the second side. The substrate comprises a cavity on the first side. The electrode is positioned at a bottom of the cavity on the first side of the substrate. The deformable membrane is positioned on the first side of the substrate. The deformable membrane encloses the cavity and deforms responsive to external stimuli. The compensation structure is connected to outer periphery of the deformable membrane. The compensation structure creates a bending force that is opposite to a bending force of the deformable membrane responsive to temperature changes and thermal coefficient mismatch.
Strain sensing element, having a first and second magnetic layer and a third layer that is antiferrimagnetic
According to one embodiment, a strain sensing element provided on a deformable substrate includes: a first magnetic layer; a second magnetic layer; a spacer layer; and a bias layer. Magnetization of the second magnetic layer changes according to deformation of the substrate. The spacer layer is provided between the first magnetic layer and the second magnetic layer. The second magnetic layer is provided between the spacer layer and the bias layer. The bias layer is configured to apply a bias to the second magnetic layer.
DEVICE WITH A STRESS DECOUPLING STRUCTURE
A MEMS device comprises a suspended membrane structure having an inner membrane section and an outer membrane section. The outer membrane section surrounds the inner membrane section. The membrane structure comprises an elastically deformable spring structure in the outer membrane section, such that the spring structure is arranged to convert a thermal-induced compressive stress in the suspended membrane structure into a spring displacement.
Sculpted micromirror in a digital micromirror device
A digital micromirror device comprises an array of micromirror pixels, the array comprising a first micromirror pixel and a second micromirror pixel. The first micromirror pixel comprises a hinge, where the hinge is configured to tilt toward a first raised address electrode and toward a second raised address electrode. The first micromirror pixel also comprises a first micromirror coupled to the hinge, where the first micromirror has a sculpted edge. The second micromirror pixel comprises a second micromirror, where a first gap between a first point on the sculpted edge and a nearest point to the first point on the second micromirror is larger than a second gap between a second point on the sculpted edge and a nearest point to the second point on the second micromirror.
A STRAIN SENSING ELEMENT, HAVING A FIRST AND SECOND MAGNETIC LAYER AND A THIRD LAYER THAT IS ANTIFERRIMAGNETIC
According to one embodiment, a strain sensing element provided on a deformable substrate includes: a first magnetic layer; a second magnetic layer; a spacer layer; and a bias layer. Magnetization of the second magnetic layer changes according to deformation of the substrate. The spacer layer is provided between the first magnetic layer and the second magnetic layer. The second magnetic layer is provided between the spacer layer and the bias layer. The bias layer is configured to apply a bias to the second magnetic layer.
MEMS GAP CONTROL STRUCTURES
Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.
MEMS DEVICE WITH DAMPING FLUID VERTICALLY SANDWICHED BETWEEN MOVING AND NON-MOVING STRUCTURES
A microelectromechanical system (MEMS) device includes a substrate, a suspended element and a damping structure connected to the suspended element and one or more fluid confinement structures. The suspended element is connected to a fixed part of the substrate by one or more flexures configured to permit movement of the suspended element relative to a fixed part of the substrate. The damping structure extends into a gap between the suspended element and the fixed part of the substrate. The damping structure includes one or more winglets that protrude over a recessed portion of the fixed part of the substrate. The fluid confinement structures are formed by the recessed portion of the fixed substrate and are configured to permit movement of the damping structure over the recessed portion of the substrate and confine a viscoelastic fluid to the limited portion of the gap underneath the winglets.