In an embodiment a MEMS microphone includes a substrate, a shield layer, a central insulation layer and a membrane, wherein the substrate has an upper surface with a first opening therein, wherein the shield layer is arranged between the upper surface of the substrate and the membrane, the shield layer having a second opening, wherein the central insulation layer is arranged between the shield layer and the membrane, the shield layer comprising a dielectric bulk material having a third opening and an etch stopper forming an edge of the central insulation layer towards the third opening such that the dielectric bulk material of the central insulation layer is completely enclosed between the shield layer, the etch stopper and the membrane, and wherein all openings are arranged one above another to form a common sound channel to the membrane.

A low-stress packaging structure for a MEMS acceleration sensor chip includes a MEMS sensor chip and a chip carrier. Two sides of the bottom of the sensor chip are provided with a first metal layer and a second metal layer respectively. Two sides of a die attach area of the chip carrier are correspondingly provided with a third metal layer and a fourth metal layer. The first metal layer of the sensor chip and the third metal layer of the chip carrier are bonded together. The second metal layer of the sensor chip and the fourth metal layer of the chip carrier are only in contact but not bonded. A groove is arranged between the first metal layer and the second metal layer at the bottom of the sensor chip. A certain gap is defined between the sensor chip and cavity walls of chip carrier.

Accelerometer including a decoupling structure for fixing the accelerometer on a package and a MEMS sensor chip for measuring an acceleration. The chip is supported by the decoupling structure and includes a sensor wafer layer of a semiconductor material. The decoupling structure forms a bottom portion for fixing the decoupling structure on the package and a top portion fixed to the sensor wafer layer so that the chip is arranged above the decoupling structure. A width of the top portion in a planar direction is smaller than a width of the bottom portion and/or the sensor wafer layer in the planar direction. The decoupling structure is made of the same semiconductor material as the sensor wafer layer. The centre point of the top portion is arranged in a central region of the bottom portion. The chip includes a hermetically closed cavity which includes a seismic mass of the chip.

A sensor module including a microelectromechanical systems (“MEMS”) gyroscope resonator and an accelerometer positioned adjacent the MEMS gyroscope resonator is disclosed herein. The MEMS gyroscope resonator and accelerometer can be co-fabricated on a sensor die and a control circuit can be electrically coupled to the sensor die. The control circuit can be configured to receive signals from and control the MEMS gyroscope resonator and the accelerometer. An interposer can be positioned between and mechanically coupled to the sensor module and a substrate, wherein the interposer is configured to relieve stresses imposed by an operating environment on the sensor module and the substrate.

Embodiments of the disclosure provide a packaged micro-mirror for an optical sensing system. In some embodiments, the packaged micro-mirror may include a package substrate. In some embodiments, the packaged micro-mirror may include a micro-mirror die attached to the package substrate through a first die attach material and a second die attach material. In some embodiments, the first die attach material may have a first Young’s modulus and the second die attach material may have a second Young’s modulus higher than the first Young’s modulus. In some embodiments, at least one of the first die attach material or the second die attach material may be a conductive adhesive forming an electrical connection between the micro-mirror die and package substrate.

Aspects of the disclosure described herein related to packaging an ultrasound-on-a-chip. In some embodiments, an apparatus includes an ultrasound-on-a-chip that has through-silicon vias (TSVs) and an interposer coupled to the ultrasound-on-a-chip and including vias, where the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer. In some embodiments, an apparatus includes an ultrasound-on-a-chip having bond pads, an interposer that has bond pads and that is coupled to the ultrasound-on-a-chip, and wirebonds extending from the bond pads on the ultrasound-on-a-chip to the bond pads on the interposer.

A constraint for a sensor assembly includes a silicon wafer and a flexible structure. The silicon wafer has a first side, a second side opposite to the first side, and a passageway extending through the silicon wafer from the first side to the second side. The first side is a continuous planar surface except for the passageway. The flexible structure extends from the second side.

A microelectromechanical device includes a support structure, a microelectromechanical system die, incorporating a microstructure and a connection structure between the microelectromechanical system die and the support structure. The connection structure includes a spacer structure, joined to the support structure, and a film applied to one face of the spacer structure opposite to the support structure. The spacer structure laterally delimits at least in part a cavity and the film extends on the cavity, at a distance from the support structure. The microelectromechanical system die is joined to the film on the cavity.

The technology of this application relates to an encapsulation structure that includes a micro-electromechanical system (MEMS) device, a substrate, and an attachment material. Materials included in the substrate include at least a first-type material and a second-type material, a coefficient of thermal expansion of the first-type material is less than a coefficient of thermal expansion of a base material of the MEMS device, and a coefficient of thermal expansion of the second-type material is greater than the coefficient of thermal expansion of the base material of the MEMS device. The attachment material is located between the MEMS device and the substrate, and is configured to attach the MEMS device to the substrate. The substrate includes a plurality of different materials.

A semiconductor device includes a semiconductor chip including a chip substrate and a MEMS element, wherein the chip substrate includes a first surface and a second surface arranged opposite to the first surface, and wherein the MEMS element is disposed at the first surface of the chip substrate and the MEMS element includes a sensitive area; at least one electrical interconnect structure electrically connected to the first surface of the chip substrate; a chip carrier electrically connected to the at least one electrical interconnect structure; a flexible film provided over the second surface of the chip substrate to form a pocket in which the semiconductor chip resides; and a compressible material arranged between the second surface of the chip substrate and the flexible film.