A switching device includes an opening disposed in a substrate. A source is disposed adjacent the opening and has a contact surface parallel to sidewalls of the opening. A drain is disposed adjacent the opening and has a contact surface parallel to the sidewalls of the opening. A moveable gate stack includes a channel and a gate. The moveable gate stack is disposed within the opening.

Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

A MEMS switch includes: a substrate, an anchor point, the first signal line, a first driving electrode, a switch beam, and a second signal line. The anchor point is on the substrate. The first signal line and the first driving electrode are on the substrate, and are arranged on two sides of the anchor point. The second signal line is on a side of the anchor point close to the substrate. The switch beam is connected with the anchor point, and two ends of the switch beam are suspended and on the side of the anchor point away from the substrate, an orthographic projection of the switch beam onto the substrate surface coincides at least partially with the orthographic projection of the first signal line onto the substrate surface, and an orthographic projection of the first driving electrode onto the substrate surface, respectively.

A switching device includes an opening disposed in a substrate. A source is disposed adjacent the opening and has a contact surface parallel to sidewalls of the opening. A drain is disposed adjacent the opening and has a contact surface parallel to the sidewalls of the opening. A moveable gate stack includes a channel and a gate. The moveable gate stack is disposed within the opening.

Embodiments of the present disclosure provide an MEMS switch and an electronic device. The MEMS switch includes: a base substrate; an electrode structure on the base substrate, including a first ground electrode, a signal transmission line, a second ground electrode, a first drive electrode and a third ground electrode which are sequentially arranged on the base substrate at intervals; and a metal beam stretching over the electrode structure, where a first end of the metal beam is electrically connected to the third ground electrode, an orthographic projection of a second end of the metal beam on the base substrate is within an orthographic projection of the signal transmission line on the base substrate, and an orthographic projection of the metal beam on the base substrate is overlapped with an orthographic projection of the first drive electrode on the base substrate.

The present disclosure provides a flexible MEMS switch, including an MEMS body and a packaging body outside the MEMS body, the packaging body includes a first flexible cover plate and a second flexible cover plate arranged at two opposite sides of the MEMS body respectively, a first cavity is formed between the first flexible cover plate and the MEMS body, and a second cavity is formed between the second flexible cover plate and the MEMS body. The present disclosure further provides a method for manufacturing the flexible MEMS switch.

High voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A control circuit may include an isolator that provides an isolated activation voltage to a voltage supply and control circuit. The voltage supply and control circuit uses the isolated activation voltage to supply a control voltage to one of the control electrodes with respect to a first reference voltage, causing the beam to provide an input voltage received from an input terminal to a contact electrode of the MEMS teeter-totter switch electrically connected to an output terminal. The input voltage is applied on the beam with respect to a second reference voltage different from the first reference voltage.

Robust and reliable microelectromechanical photoswitch devices are provided. The devices are better able to withstand mechanical shock and rough handling during transportation or field operation due to the use of a mechanical stop structure that limits displacement of movable parts of the devices and prevents their contacts from becoming locked. The technology also greatly extends the dynamic range of the sensors, enabling them to detect weak electromagnetic radiation signals as well as much stronger signals without damage when exposed to signals that are orders of magnitude larger than threshold.

A micro-relay switch array may comprise an array of micro-relays disposed on a substrate, and a cap disposed over the array of micro-relays, thereby encapsulating the array of micro-relays. The micro-relay switch array may further comprise an array of through-substrate vias (TSVs) associated with the array of micro-relays, arranged such that columns of TSVs alternate with columns of micro-relays, and a plurality of device electrical conductors, each of which electrically couples one of the TSVs of the array of TSVs directly to at least two of the micro-relays. The micro-relay switch array may further comprise a plurality of TSV electrical conductors, each of which electrically couples at least two TSVs together. Each micro-relay of the array of micro-relays may be a micro-electromechanical system (MEMS) switch. The substrate and cap may be glass, and the TSVs may be through-glass vias.

A method for detecting orientation of an integrated circuit is disclosed. The method includes moving, in response to a gravitational force, a mobile metallic piece in an evolution zone of a housing. The housing is formed in an interconnect region of the integrated circuit. The housing includes walls defining the evolution zone. The walls are formed within multiple metallization levels of the interconnect region. The walls include a floor wall and a ceiling wall. At least one of the floor wall and ceiling wall incorporate a pointed element directing its pointed region towards the mobile metallic piece. The pointed element delimits an open crater in a concave part of a projection. The method further includes creating an electrical signal by movement of the mobile metallic piece at a plurality of electrically conducting elements positioned at boundary points of the evolution zone and detecting the electrical signal by a detector.