A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

A semiconductor device may include a first substrate, a first electrical component, a lid, a second substrate, and a second electrical component. The first substrate may include an upper surface, a lower surface, and an upper cavity in the upper surface. The first electrical component may reside in the upper cavity of the first substrate. The lid may cover the upper cavity and may include a port that permits fluid to flow between an environment external to the semiconductor device and the upper cavity. The second substrate may include the second electrical component mounted to an upper surface of the second substrate. The lower surface of the first substrate and the upper surface of the second substrate may fluidically seal the second electrical component from the upper cavity.

A method for operating a capacitive MEMS sensor. The method includes: supplying a defined electrical potential on a deflectably mounted, seismic mass of the MEMS sensor; capacitively inducing a vibrational motion of the seismic mass with the aid of a clocked electrical control voltage; compensating for fluctuations in the supplied electrical potential on the seismic mass caused by the clocked electrical control voltage, by selectively charging and/or discharging an electrical storage element connected to the seismic mass in accordance with the frequency of the clocked electrical control voltage.

A method for producing a micromechanical device having a damper structure. The method includes: (A) providing a micromechanical wafer having a rear side; (B) applying a liquid damper material onto the rear side; (C) pressing a matrix against the rear side in order to form at least one damper structure in the damper material; (D) curing the damper material; and (E) removing the matrix.

A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

A sensor device includes a sensor element, a supporting member, a substrate, and a bonding wire. The supporting member is electrically connected to the sensor element. The substrate is electrically connected to the supporting member. The bonding wire forms at least part of a connection path that electrically connects the sensor element and the supporting member together. The substrate and an installation member on which the sensor element is installed intersect with each other. The sensor element and the supporting member are separated from each other.

A sensor can comprise a sensor die with a first sensor surface and a second sensor surface opposite to the first sensor surface. The sensor can further comprise a die pad component with a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface. The sensor can further comprise a lead frame component with a first frame surface and a second frame surface opposite to the first frame surface, the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, the second pad surface is isolated from the second frame surface, and the lead frame component is electrically connected to the sensor die.

A MEMS device, comprising a plurality of stacked layers, includes a plurality of solder couplings that mechanically fasten and electrically couple the MEMS device to an external component. The plurality of solder couplings is connected atop a portion of an upper surface that extends past an edge surface of a MEMS layer to form a shelf and are electrically connected via the shelf to receive signals generated by the MEMS device. These signals are provided to the external component via the solder couplings.

A headphone and an electronic device are provided. The headphone includes a gyroscope, which senses a bone conduction vibration and provides a quadrature error signal for reflecting the bone conduction vibration. Specifically, the headphone includes a transmission assembly that acts directly or indirectly on the gyroscope or an inertial measurement unit (IMU) including the gyroscope. The transmission assembly transmits the bone conduction vibration to the gyroscope to make the gyroscope strain, thereby causing the quadrature error signal of the gyroscope to change to detect the bone conduction vibration with sensitivity.

A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electromechanical system (MEMS) device pattern is etched into the device wafer.