A micro-electro mechanical system (MEMS) pressure sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which a first space between the first substrate and the sensing structure is communicated with outside, and a second space between the second substrate and the sensing structure is communicated with or isolated from the outside.

A semiconductor manufacturing process enables a complex multi-layer, silicon based MEMS devices, such as a gyroscope or accelerometer to be formed without using Silicon On Insulator (SOI) substrates and obviates the need to purchase and use SOI wafers as starting materials. The disclosed techniques further allows the etching of the sacrificial oxide to be head started prior to fusion bonding, thereby reducing the amount of release etching required at the end of the MEMS wafer processing.

A micromechanical pressure sensor device includes: an MEMS wafer having a front side and a rear side; a first micromechanical functional layer formed above the front side of the MEMS wafer; and a second micromechanical functional layer formed above the first micromechanical functional layer. A deflectable first pressure detection electrode is formed in one of the first and second micromechanical functional layers. A fixed second pressure detection electrode is formed spaced apart from and opposite the deflectable first pressure detection electrode. An elastically deflectable diaphragm area is formed above the front side of the MEMS wafer. An external pressure is applied to the diaphragm area via an access opening in the MEMS wafer, and the wafer is connected to the deflectable first pressure detection electrode via a plug-like joining area.

A micro-electro mechanical system (MEMS) pressure sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which a first space between the first substrate and the sensing structure is communicated with outside, and a second space between the second substrate and the sensing structure is communicated with or isolated from the outside.

MEMS device having a support region elastically carrying a suspended mass through first elastic elements. A tuned dynamic absorber is elastically coupled to the suspended mass and configured to dampen quadrature forces acting on the suspended mass at the natural oscillation frequency of the dynamic absorber. The tuned dynamic absorber is formed by a damping mass coupled to the suspended mass through second elastic elements. In an embodiment, the suspended mass and the damping mass are formed in a same structural layer, for example of semiconductor material, and the damping mass is surrounded by the suspended mass.

A micro-electromechanical (MEMS) apparatus includes a substrate, two first anchors, a frame, and two elastic members. The substrate is provided with a reference point thereon. The frame surrounds the two first anchors, and each of the elastic members connects the corresponding first anchor and the frame. Each of the first anchors is disposed near the center of the MEMS apparatus to decrease an effect caused by warpage of the substrate. The MEMS apparatus can be applied to an MEMS sensor having a rotatable mass, such as a three-axis accelerometer or a magnetometer, to improve process yield, reliability, and measurement accuracy.

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

An inertial force sensor that can suppress fluctuation of detection sensitivity even if an external stress is applied to the inertial force sensor. Angular velocity sensor (1), that is, an inertial force sensor includes ceramic substrate (6), lower lid (4) adhering to ceramic substrate (6) with adhesives (11a and 11b) (first adhesives), and sensor element (2) adhering to lower lid (4) with adhesives (10a and 10b) (second adhesives). The elastic moduli of adhesives (11a and 11b) are smaller than those of adhesives (10a and 10b).

A coupling device (100) for coupling two vibration systems (210, 220), which are mounted over a substrate such that the vibration systems are linearly arranged along a first direction (x) and can vibrate along the first direction (x), has a closed spring structure (110), which can be connected to the vibration systems (210, 220) at outer faces lying opposite each other along the first direction (x), and an anchor structure (120), which is rigidly connected to the substrate and which is arranged within the closed spring structure (110) and is connected to the spring structure (110) at two inner faces lying opposite each other along a second direction (y) that is orthogonal to the first direction. In this manner, the coupling device (100) connected to the vibration systems (210, 220) imparts a differential-mode coupling to the vibration systems (210, 220) as the mode with the lowest frequency.

Temperature stabilization systems and methods for MEMS sensors are disclosed. In an example, a temperature stabilization system may include heating and or cooling components within a printed circuit board (PCB) that holds a MEMS sensor. For example, a resistance heating wire can be used as a heating component and a Peltier device may be used as a heating and or a cooling component. Temperature sensors may be placed on the MEMS sensor itself and or the external environment and the measurements from the temperature sensors can be used to run a feedback loop to the keep the MEMS sensors within a desired temperature range through the use of the heating and or the cooling components.